Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C
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arXiv
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| Hauptverfasser: | , , , , , , , , |
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| Format: | Preprint |
| Veröffentlicht: |
2024
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| _version_ | 1866916454563053568 |
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| author | Fiorenza, P. Cordiano, F. Alessandrino, S. M. Russo, A. Zanetti, E. Saggio, M. Bongiorno, C. Giannazzo, F. Roccaforte, F. |
| author_facet | Fiorenza, P. Cordiano, F. Alessandrino, S. M. Russo, A. Zanetti, E. Saggio, M. Bongiorno, C. Giannazzo, F. Roccaforte, F. |
| contents | The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB). |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_19545 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C Fiorenza, P. Cordiano, F. Alessandrino, S. M. Russo, A. Zanetti, E. Saggio, M. Bongiorno, C. Giannazzo, F. Roccaforte, F. Applied Physics The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB). |
| title | Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2410.19545 |