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Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C

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Bibliographic Details
Main Authors:	Fiorenza, P., Cordiano, F., Alessandrino, S. M., Russo, A., Zanetti, E., Saggio, M., Bongiorno, C., Giannazzo, F., Roccaforte, F.
Format:	Preprint
Published:	2024
Subjects:	Applied Physics
Online Access:	Acceder al recurso
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