Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866910667407097856 |
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| author | Sun, Jianshi Li, Shouhang Shao, Cheng Tong, Zhen An, Meng Yao, Yuhang Hu, Yue Zhu, Xiongfei Liu, Yifan Wang, Renzong Liu, Xiangjun Frauenheim, Thomas |
| author_facet | Sun, Jianshi Li, Shouhang Shao, Cheng Tong, Zhen An, Meng Yao, Yuhang Hu, Yue Zhu, Xiongfei Liu, Yifan Wang, Renzong Liu, Xiangjun Frauenheim, Thomas |
| contents | As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility is relatively low and dramatically decreases with increasing temperature, which severely limits further applications. Herein, we proposed that the hole mobility can be efficiently enhanced via slight compressive shear strain along the [100] direction, while the improvement via shear strain along the [111] direction is marginal. This impressive distinction is attributed to the deformation potential and the elastic compliance matrix. The shear strain breaks the symmetry of the crystalline structure and lifts the band degeneracy near the valence band edge, resulting in a significant suppression of interband electron-phonon scattering. Moreover, the hole mobility becomes less temperature-dependent due to the decrease of electron scatterings from high-frequency acoustic phonons. Remarkably, the in-plane hole mobility of diamond is increased by approximately 800% at 800 K with a 2% compressive shear strain along the [100] direction. The efficient shear strain strategy can be further extended to other semiconductors with face-centered cubic geometry. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_19576 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain Sun, Jianshi Li, Shouhang Shao, Cheng Tong, Zhen An, Meng Yao, Yuhang Hu, Yue Zhu, Xiongfei Liu, Yifan Wang, Renzong Liu, Xiangjun Frauenheim, Thomas Materials Science As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility is relatively low and dramatically decreases with increasing temperature, which severely limits further applications. Herein, we proposed that the hole mobility can be efficiently enhanced via slight compressive shear strain along the [100] direction, while the improvement via shear strain along the [111] direction is marginal. This impressive distinction is attributed to the deformation potential and the elastic compliance matrix. The shear strain breaks the symmetry of the crystalline structure and lifts the band degeneracy near the valence band edge, resulting in a significant suppression of interband electron-phonon scattering. Moreover, the hole mobility becomes less temperature-dependent due to the decrease of electron scatterings from high-frequency acoustic phonons. Remarkably, the in-plane hole mobility of diamond is increased by approximately 800% at 800 K with a 2% compressive shear strain along the [100] direction. The efficient shear strain strategy can be further extended to other semiconductors with face-centered cubic geometry. |
| title | Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain |
| topic | Materials Science |
| url | https://arxiv.org/abs/2410.19576 |