Harnessing Room-Temperature Ferroelectricity in Metal Oxide Monolayers for Advanced Logic Devices
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866909365161689088 |
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| author | Naseer, Ateeb Rafiq, Musaib Bhowmick, Somnath Agarwal, Amit Chauhan, Yogesh Singh |
| author_facet | Naseer, Ateeb Rafiq, Musaib Bhowmick, Somnath Agarwal, Amit Chauhan, Yogesh Singh |
| contents | Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with significant spontaneous polarization. Additionally, these monolayers have a narrow valence band, which is energetically separated from the rest of the low-lying valence bands. Such a unique band structure limits the long thermal tail of the hot carriers, mitigating subthreshold thermionic leakage and allowing field-effect transistors (FETs) to function beyond the bounds imposed on conventional FETs by thermodynamics. Our quantum transport simulations reveal that the FETs based on these MO monolayers exhibit a large ON/OFF ratio with an average subthreshold swing of less than 60 mV/decade at room temperature, even for short gate lengths. Our work motivates further exploration of the MO monolayers for developing advanced, high-performance memory and logic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_19582 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Harnessing Room-Temperature Ferroelectricity in Metal Oxide Monolayers for Advanced Logic Devices Naseer, Ateeb Rafiq, Musaib Bhowmick, Somnath Agarwal, Amit Chauhan, Yogesh Singh Applied Physics Materials Science Quantum Physics Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with significant spontaneous polarization. Additionally, these monolayers have a narrow valence band, which is energetically separated from the rest of the low-lying valence bands. Such a unique band structure limits the long thermal tail of the hot carriers, mitigating subthreshold thermionic leakage and allowing field-effect transistors (FETs) to function beyond the bounds imposed on conventional FETs by thermodynamics. Our quantum transport simulations reveal that the FETs based on these MO monolayers exhibit a large ON/OFF ratio with an average subthreshold swing of less than 60 mV/decade at room temperature, even for short gate lengths. Our work motivates further exploration of the MO monolayers for developing advanced, high-performance memory and logic devices. |
| title | Harnessing Room-Temperature Ferroelectricity in Metal Oxide Monolayers for Advanced Logic Devices |
| topic | Applied Physics Materials Science Quantum Physics |
| url | https://arxiv.org/abs/2410.19582 |