An Ultra-low-loss Compact Phase-Change Material-based Hybrid-mode Interferometer for Photonic Memories

Fuente: arXiv
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Autores principales: Dwivedi, Ranjeet, Pavanello, Fabio, Orobtchouk, Regis
Formato: Preprint
Publicado: 2024
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author Dwivedi, Ranjeet
Pavanello, Fabio
Orobtchouk, Regis
author_facet Dwivedi, Ranjeet
Pavanello, Fabio
Orobtchouk, Regis
contents We propose a novel hybrid mode interferometer (HMI) leveraging the interference of hybridized TE-TM modes in a silicon-on-insulator (SOI) waveguide integrated with a GeSe phase change material (PCM) layer. The SOI waveguide's dimensions are optimized to support the hybridization of the fundamental transverse magnetic ($TM_0$) and the first higher transverse electric ($TE_1$) mode. This design allows for efficient and nearly equal power coupling between these two modes, resulting in high-contrast interference when starting from the amorphous PCM state. The PCM's phase transition induces a differential change in the modal effective index, enabling high-contrast transmittance modulation. Our numerical simulations demonstrate a multilevel transmission with a high contrast of nearly 14 dB, when the amorphous region's length is varied incrementally, enabling multi-bit storage. The transmittance is maximized in the fully crystalline state with an insertion loss below 0.1 dB. The HMI can also operate as a quasi-pure phase shifter when partially amorphized, making it suitable for Mach-Zehnder interferometers. These characteristics make the proposed device a promising candidate for applications in photonic memories and neuromorphic computing.
format Preprint
id arxiv_https___arxiv_org_abs_2410_19587
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle An Ultra-low-loss Compact Phase-Change Material-based Hybrid-mode Interferometer for Photonic Memories
Dwivedi, Ranjeet
Pavanello, Fabio
Orobtchouk, Regis
Optics
Applied Physics
We propose a novel hybrid mode interferometer (HMI) leveraging the interference of hybridized TE-TM modes in a silicon-on-insulator (SOI) waveguide integrated with a GeSe phase change material (PCM) layer. The SOI waveguide's dimensions are optimized to support the hybridization of the fundamental transverse magnetic ($TM_0$) and the first higher transverse electric ($TE_1$) mode. This design allows for efficient and nearly equal power coupling between these two modes, resulting in high-contrast interference when starting from the amorphous PCM state. The PCM's phase transition induces a differential change in the modal effective index, enabling high-contrast transmittance modulation. Our numerical simulations demonstrate a multilevel transmission with a high contrast of nearly 14 dB, when the amorphous region's length is varied incrementally, enabling multi-bit storage. The transmittance is maximized in the fully crystalline state with an insertion loss below 0.1 dB. The HMI can also operate as a quasi-pure phase shifter when partially amorphized, making it suitable for Mach-Zehnder interferometers. These characteristics make the proposed device a promising candidate for applications in photonic memories and neuromorphic computing.
title An Ultra-low-loss Compact Phase-Change Material-based Hybrid-mode Interferometer for Photonic Memories
topic Optics
Applied Physics
url https://arxiv.org/abs/2410.19587