Using Electrical Impedance Spectroscopy to Separately Quantify the Effect of Strain on Nanosheet and Junction Resistance in Printed Nanosheet Networks
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866929561116082176 |
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| author | Caffrey, Eoin Carey, Tian Doolan, Luke Dawson, Anthony Coleman, Emmet Sofer, Zdenek Cassidy, Oran Gabbett, Cian Coleman, Jonathan N. |
| author_facet | Caffrey, Eoin Carey, Tian Doolan, Luke Dawson, Anthony Coleman, Emmet Sofer, Zdenek Cassidy, Oran Gabbett, Cian Coleman, Jonathan N. |
| contents | Many printed electronic applications require strain-independent electrical properties to ensure deformation-independent performance. Thus, developing printed, flexible devices using 2D and other nanomaterials will require an understanding of the effect of strain on the electrical properties of nano-networks. Here we introduce novel AC electrical techniques to fully characterise the effect of strain on the resistance of high mobility printed networks, fabricated from of electrochemically exfoliated MoS2 nanosheets. These devices were initially characterised using DC piezoresistance measurements and showed good cyclability and a linear strain response, consistent with a low gauge factor of G~3. However, AC impedance spectroscopy measurements, performed as a function of strain, allowed the measurement of the effects of strain on both the nanosheets and the inter-nanosheet junctions separately. The junction resistance was found to increase linearly with strain, while the nanosheet resistance remained constant. This response is consistent with strain-induced sliding of the highly-aligned nanosheets past one another, without any strain being transferred to the sheets themselves. Our approach allows us to individually estimate the contributions of dimensional factors (G~1.4) and intrinsic factors (G~1.9) to the total gauge factor. This novel technique may provide insight into other piezoresistive systems. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2410_19911 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Using Electrical Impedance Spectroscopy to Separately Quantify the Effect of Strain on Nanosheet and Junction Resistance in Printed Nanosheet Networks Caffrey, Eoin Carey, Tian Doolan, Luke Dawson, Anthony Coleman, Emmet Sofer, Zdenek Cassidy, Oran Gabbett, Cian Coleman, Jonathan N. Mesoscale and Nanoscale Physics Many printed electronic applications require strain-independent electrical properties to ensure deformation-independent performance. Thus, developing printed, flexible devices using 2D and other nanomaterials will require an understanding of the effect of strain on the electrical properties of nano-networks. Here we introduce novel AC electrical techniques to fully characterise the effect of strain on the resistance of high mobility printed networks, fabricated from of electrochemically exfoliated MoS2 nanosheets. These devices were initially characterised using DC piezoresistance measurements and showed good cyclability and a linear strain response, consistent with a low gauge factor of G~3. However, AC impedance spectroscopy measurements, performed as a function of strain, allowed the measurement of the effects of strain on both the nanosheets and the inter-nanosheet junctions separately. The junction resistance was found to increase linearly with strain, while the nanosheet resistance remained constant. This response is consistent with strain-induced sliding of the highly-aligned nanosheets past one another, without any strain being transferred to the sheets themselves. Our approach allows us to individually estimate the contributions of dimensional factors (G~1.4) and intrinsic factors (G~1.9) to the total gauge factor. This novel technique may provide insight into other piezoresistive systems. |
| title | Using Electrical Impedance Spectroscopy to Separately Quantify the Effect of Strain on Nanosheet and Junction Resistance in Printed Nanosheet Networks |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2410.19911 |