Observation of Temperature-Dependent Capture Cross-Section for Main Deep-Levels in $β$-Ga2O3
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| Format: | Preprint |
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2024
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| author | Vasilev, A. A. Kochkova, A. I. Polyakov, A. Y. Romanov, A. A. Matros, N. R. Alexanyan, L. A. Shchemerov, I. V. Pearton, S. J. |
| author_facet | Vasilev, A. A. Kochkova, A. I. Polyakov, A. Y. Romanov, A. A. Matros, N. R. Alexanyan, L. A. Shchemerov, I. V. Pearton, S. J. |
| contents | Direct observation of capture cross-section is challenging due to the need of extremely short filling pulses in the two-gate Deep-Level Transient Spectroscopy (DLTS). Simple estimation of cross-section can be done from DLTS and Admittance Spectroscopy (AS) data, but it is not feasible to distinguish temperature dependence of pre-exponential and exponential parts of the emission rate equation with sufficient precision conducting a single experiment. This paper presents experimental data of deep-levels in $β$-Ga2O3 that has been gathered by our group since 2017. Based on the gathered data we propose a derivation of apparent activation energy ($E_a^m$) and capture cross-section ($σ_n^m$) assuming temperature dependent capture via multiphonon emission model, which resulted in strong correlation between $E_a^m$ and $σ_n^m$ according to Meyer-Neldel rule, which allowed us to estimate low- and high-temperature capture coefficients $C_0$ and $C_1$ as well as capture barrier $E_b$. It also has been shown that without considering the temperature dependence of capture cross-section, the experimental values of $σ_n$ are overestimated by 1-3 orders of magnitude. A careful consideration of the data also allows to be more certain identifying deep-levels by their "fingerprints" ($E_a$ and $σ_n$) considering two additional parameters ($E_{MN}$ and $σ_{00}$) and to verify the density functional theory (DFT) computation of deep-level recombination properties. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2410_20509 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Observation of Temperature-Dependent Capture Cross-Section for Main Deep-Levels in $β$-Ga2O3 Vasilev, A. A. Kochkova, A. I. Polyakov, A. Y. Romanov, A. A. Matros, N. R. Alexanyan, L. A. Shchemerov, I. V. Pearton, S. J. Materials Science Other Condensed Matter Applied Physics Direct observation of capture cross-section is challenging due to the need of extremely short filling pulses in the two-gate Deep-Level Transient Spectroscopy (DLTS). Simple estimation of cross-section can be done from DLTS and Admittance Spectroscopy (AS) data, but it is not feasible to distinguish temperature dependence of pre-exponential and exponential parts of the emission rate equation with sufficient precision conducting a single experiment. This paper presents experimental data of deep-levels in $β$-Ga2O3 that has been gathered by our group since 2017. Based on the gathered data we propose a derivation of apparent activation energy ($E_a^m$) and capture cross-section ($σ_n^m$) assuming temperature dependent capture via multiphonon emission model, which resulted in strong correlation between $E_a^m$ and $σ_n^m$ according to Meyer-Neldel rule, which allowed us to estimate low- and high-temperature capture coefficients $C_0$ and $C_1$ as well as capture barrier $E_b$. It also has been shown that without considering the temperature dependence of capture cross-section, the experimental values of $σ_n$ are overestimated by 1-3 orders of magnitude. A careful consideration of the data also allows to be more certain identifying deep-levels by their "fingerprints" ($E_a$ and $σ_n$) considering two additional parameters ($E_{MN}$ and $σ_{00}$) and to verify the density functional theory (DFT) computation of deep-level recombination properties. |
| title | Observation of Temperature-Dependent Capture Cross-Section for Main Deep-Levels in $β$-Ga2O3 |
| topic | Materials Science Other Condensed Matter Applied Physics |
| url | https://arxiv.org/abs/2410.20509 |