Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors
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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| author | Hao, Duxing Chang, Wen-Hao Chang, Yu-Chen Liu, Wei-Tung Ho, Sheng-Zhu Lu, Chen-Hsuan Yang, Tilo H. Kawakami, Naoya Chen, Yi-Chun Liu, Ming-Hao Lin, Chun-Liang Lu, Ting-Hua Lan, Yann-Wen Yeh, Nai-Chang |
| author_facet | Hao, Duxing Chang, Wen-Hao Chang, Yu-Chen Liu, Wei-Tung Ho, Sheng-Zhu Lu, Chen-Hsuan Yang, Tilo H. Kawakami, Naoya Chen, Yi-Chun Liu, Ming-Hao Lin, Chun-Liang Lu, Ting-Hua Lan, Yann-Wen Yeh, Nai-Chang |
| contents | In semiconducting monolayer transition metal dichalcogenides (ML-TMDs), broken inversion symmetry and strong spin-orbit coupling result in spin-valley lock-in effects so that the valley degeneracy may be lifted by external magnetic fields, potentially leading to real-space structural transformation. Here, we report magnetic field (B)-induced giant electric hysteretic responses to back-gate voltages in ML-MoS2 field-effect transistors (FETs) on SiO2/Si at temperatures < 20 K. The observed hysteresis increases with |B| up to 12 T and is tunable by varying the temperature. Raman spectroscopic and scanning tunneling microscopic studies reveal significant lattice expansion with increasing |B| at 4.2 K, and this lattice expansion becomes asymmetric in ML-MoS2 FETs on rigid SiO2/Si substrates, leading to out-of-plane mirror symmetry breaking and the emergence of a tunable out-of-plane ferroelectric-like polar order. This broken symmetry-induced polarization in ML-MoS2 shows typical ferroelectric butterfly hysteresis in piezo-response force microscopy, adding ML-MoS2 to the single-layer material family that exhibit out-of-plane polar order-induced ferroelectricity, which is promising for such technological applications as cryo-temperature ultracompact non-volatile memories, memtransistors, and ultrasensitive magnetic field sensors. Moreover, the polar effect induced by asymmetric lattice expansion may be further generalized to other ML-TMDs and achieved by nanoscale strain engineering of the substrate without magnetic fields. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_20702 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors Hao, Duxing Chang, Wen-Hao Chang, Yu-Chen Liu, Wei-Tung Ho, Sheng-Zhu Lu, Chen-Hsuan Yang, Tilo H. Kawakami, Naoya Chen, Yi-Chun Liu, Ming-Hao Lin, Chun-Liang Lu, Ting-Hua Lan, Yann-Wen Yeh, Nai-Chang Strongly Correlated Electrons In semiconducting monolayer transition metal dichalcogenides (ML-TMDs), broken inversion symmetry and strong spin-orbit coupling result in spin-valley lock-in effects so that the valley degeneracy may be lifted by external magnetic fields, potentially leading to real-space structural transformation. Here, we report magnetic field (B)-induced giant electric hysteretic responses to back-gate voltages in ML-MoS2 field-effect transistors (FETs) on SiO2/Si at temperatures < 20 K. The observed hysteresis increases with |B| up to 12 T and is tunable by varying the temperature. Raman spectroscopic and scanning tunneling microscopic studies reveal significant lattice expansion with increasing |B| at 4.2 K, and this lattice expansion becomes asymmetric in ML-MoS2 FETs on rigid SiO2/Si substrates, leading to out-of-plane mirror symmetry breaking and the emergence of a tunable out-of-plane ferroelectric-like polar order. This broken symmetry-induced polarization in ML-MoS2 shows typical ferroelectric butterfly hysteresis in piezo-response force microscopy, adding ML-MoS2 to the single-layer material family that exhibit out-of-plane polar order-induced ferroelectricity, which is promising for such technological applications as cryo-temperature ultracompact non-volatile memories, memtransistors, and ultrasensitive magnetic field sensors. Moreover, the polar effect induced by asymmetric lattice expansion may be further generalized to other ML-TMDs and achieved by nanoscale strain engineering of the substrate without magnetic fields. |
| title | Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2410.20702 |