Enhancement of piezoelectric response in V doped LiNbO3 films deposited by RF magnetron sputtering
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arXiv
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| Autores principales: | , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866910946642886656 |
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| author | Zeng, Xiaomei Lv, Ting Zhang, Xiangyu Zeng, Zhong Yang, Bing Pogrebnjak, Alexander Pelenovich, Vasiliy O. Liu, Sheng |
| author_facet | Zeng, Xiaomei Lv, Ting Zhang, Xiangyu Zeng, Zhong Yang, Bing Pogrebnjak, Alexander Pelenovich, Vasiliy O. Liu, Sheng |
| contents | LiNbO3 films doped with vanadium (V) were deposited using RF magnetron sputtering technique. To realize doping with a wider range of V concentration, a 30 mm V metal inlaid target asymmetrically embedded in the 150 mm lithium niobate target was used. The V concentration in the deposited films was a decreasing function of the distance from the V target. The V/Nb ratio in the film decreased from 0.155 to 0.024. Surface and inner morphology and structure, phase and element composition, microstructure, and ferroelectric properties of the undoped and V doped LiNbO3 films were studied. The measured maximal d33 constant of the LiNbVO film with V/Nb ratio of 0.07 was about three times higher than that of the undoped LiNbO3 film, 13.5 pC/N and 4.76 pC/N, respectively. The optimal composition in the deposition geometry used was within the V/Nb ratio range of 0.05 to 0.13. Undoped and V doped LiNbO3 thin films were used as bulk acoustic wave ultrasonic transducers deposited on stainless steel plates to generate longitudinal waves and compare their ultrasonic performance. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_20864 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Enhancement of piezoelectric response in V doped LiNbO3 films deposited by RF magnetron sputtering Zeng, Xiaomei Lv, Ting Zhang, Xiangyu Zeng, Zhong Yang, Bing Pogrebnjak, Alexander Pelenovich, Vasiliy O. Liu, Sheng Materials Science Chemical Physics LiNbO3 films doped with vanadium (V) were deposited using RF magnetron sputtering technique. To realize doping with a wider range of V concentration, a 30 mm V metal inlaid target asymmetrically embedded in the 150 mm lithium niobate target was used. The V concentration in the deposited films was a decreasing function of the distance from the V target. The V/Nb ratio in the film decreased from 0.155 to 0.024. Surface and inner morphology and structure, phase and element composition, microstructure, and ferroelectric properties of the undoped and V doped LiNbO3 films were studied. The measured maximal d33 constant of the LiNbVO film with V/Nb ratio of 0.07 was about three times higher than that of the undoped LiNbO3 film, 13.5 pC/N and 4.76 pC/N, respectively. The optimal composition in the deposition geometry used was within the V/Nb ratio range of 0.05 to 0.13. Undoped and V doped LiNbO3 thin films were used as bulk acoustic wave ultrasonic transducers deposited on stainless steel plates to generate longitudinal waves and compare their ultrasonic performance. |
| title | Enhancement of piezoelectric response in V doped LiNbO3 films deposited by RF magnetron sputtering |
| topic | Materials Science Chemical Physics |
| url | https://arxiv.org/abs/2410.20864 |