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Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps

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Bibliographic Details
Main Authors: Fiorenza, Patrick, Zignale, Marco, Camalleri, Marco, Scalia, Laura, Zanetti, Edoardo, Saggio, Mario, Giannazzo, Filippo, Roccaforte, Fabrizio
Format: Preprint
Published: 2024
Subjects:
Materials Science
Applied Physics
Online Access:
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