Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Fiorenza, Patrick, Zignale, Marco, Camalleri, Marco, Scalia, Laura, Zanetti, Edoardo, Saggio, Mario, Giannazzo, Filippo, Roccaforte, Fabrizio
Format:	Preprint
Published:	2024
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
by: Fiorenza, Patrick, et al.
Published: (2024)

Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C
by: Fiorenza, P., et al.
Published: (2024)

Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO$_2$ interface after NO annealing
by: Komatsu, Naoki, et al.
Published: (2022)

Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications
by: Salvatore Ethan Panasci, et al.
Published: (2024)

Density functional theory study of effect of NO annealing on electronic structure and carrier-scattering property of 4H-SiC(0001)/SiO$_2$ interface
by: Funaki, Nahoto, et al.
Published: (2025)

Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation
by: Tsunasaki, Mukai, et al.
Published: (2022)

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface
by: Cowie, Megan, et al.
Published: (2024)

Blocking transition of interface traps in MoS$_2$-on-SiO$_2$ FETs
by: Jana, Santu Prasad, et al.
Published: (2023)

Theoretical study on the effects of Si doping on the interface adhesion and failure behaviors of SiC/BN interface
by: Siyan Zhang, et al.
Published: (2025)

Scalable Dielectrics Technology for 2D Materials Electronics
by: Emanuela Schilirò, et al.
Published: (2025)

Spatially resolved dielectric loss at the Si/SiO$_2$ interface
by: Cowie, Megan, et al.
Published: (2023)

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS 2 Heterostructures With GaN
by: Salvatore Ethan Panasci, et al.
Published: (2026)

Observation and manipulation of charge carrier distribution at the SiO$_2$/Si interface
by: Martins, Maria M., et al.
Published: (2024)

Accurate Modeling of Gate Leakage Currents in SiC Power MOSFETs
by: Feng, Ang, et al.
Published: (2025)

Reproducibility and variability in commercial SiC MOSFETs at deep-cryogenic temperatures
by: Powell, Megan, et al.
Published: (2025)

Si/AlN p-n heterojunction interfaced with ultrathin SiO2
by: Abbasi, Haris Naeem, et al.
Published: (2024)

A Step‐by‐Step Approach for Replacing Si‐IGBTs With SiC‐MOSFETs Modules in Industrial Power Converters
by: Edemar O. Prado, et al.
Published: (2024)

Effects of h‐BN on the thermal shock and oxidation resistance of SiO 2 ‐bonded SiC refractories
by: Jun Zhou, et al.
Published: (2024)

Stochastic first-passage modeling of single-event burnout in SiC power MOSFETs
by: Liu, Feiyi, et al.
Published: (2026)

Optimization of interfaces in ceramics with SiC addition engineering for thermal cycling implications
by: John. W. Makokha, et al.
Published: (2025)

Millikelvin Si-MOSFETs for Quantum Electronics
by: Yurttagül, Nikolai, et al.
Published: (2024)

Numerical Simulation of the Optical Properties of SiC/SiO2 Quantum Dots
by: J. S. de Sousa
Published: (2004)

Research on Voltage Oscillation Suppression of SiC MOSFETs Based on Gate‐Notch Filter and PCB Optimization
by: Jiajia Li, et al.
Published: (2025)

Phase-dependent electronic structure of two-dimensional Ag layers at the graphene/SiC interface
by: Datta, Sawani, et al.
Published: (2026)

Thermal Boundary Resistance Measurement and Analysis Across SiC/SiO2 Interface
by: Deng, Shichen, et al.
Published: (2019)

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC
by: Carter, Samuel G., et al.
Published: (2025)

The cell-centered Finite-Volume self-consistent approach for heterostructures: 1D electron gas at the Si-SiO2 interface
by: Mosallanejad, Vahid, et al.
Published: (2021)

Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing
by: Zanella, Gabrielle, et al.
Published: (2026)

Study on the Oxygen Partial Pressure Dependent Annealing Effect for SiO2/SiC Stack
by: Qian Zhang, et al.
Published: (2024)

Synthesis of SiC─SiO 2 ─Si Nanocomposites from Natural Resources and Waste for Corrosion Resistance and Circular Economy
by: Nehal Bargout, et al.
Published: (2025)

Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS 2 Transistors
by: Salvatore Ethan Panasci, et al.
Published: (2025)

Effects of annealing temperature on properties of SiO2 nanoparticles for supercapacitor applications
by: J.ThenmozhiP, et al.
Published: (2026)

Evidence of polyamorphic transitions during densified SiO$_2$ glass annealing
by: Cornet, Antoine, et al.
Published: (2024)

Experimental Verification of the Switching Loss Reduction Effect and Characteristic Fluctuation of SiC MOSFETs Dependent on Gate Drive Voltage
by: Takahide Sagae, et al.
Published: (2025)

Active Drive Voltage Balancing Control Based on Charge Transfer Method for Series‐Connected SiC MOSFETs Application
by: Bin Yang, et al.
Published: (2026)

The oxidation life analysis method for SiC/SiC composite components based on an equivalent diffusion coefficient model
by: Xiaoting Shi, et al.
Published: (2024)

Exploring the semi‐coherent interface in high‐entropy carbides and β‐SiC ceramics for superior mechanical properties
by: Bin Du, et al.
Published: (2025)

Heterointerface‐Engineered SiC@SiO 2 @C Nanofibers for Simultaneous Microwave Absorption and Corrosion Resistance
by: Limeng Song, et al.
Published: (2025)

Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
by: Jousseaume, Yann, et al.
Published: (2024)

Mechanical properties and microstructure evolution of KD‐SA SiC f /BN/SiC CMCs oxidized at different temperatures
by: Liuwei Li, et al.
Published: (2024)