Role of Ion Milling Angle in Determining Conducting and Insulating States on SrTiO3 Surfaces

Fuente: arXiv
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Hauptverfasser: Wakabayashia, Yuki K., Krockenberger, Yoshiharu, Takiguchi, Kosuke, Yamamoto, Hideki, Taniyasu, Yoshitaka
Format: Preprint
Veröffentlicht: 2024
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author Wakabayashia, Yuki K.
Krockenberger, Yoshiharu
Takiguchi, Kosuke
Yamamoto, Hideki
Taniyasu, Yoshitaka
author_facet Wakabayashia, Yuki K.
Krockenberger, Yoshiharu
Takiguchi, Kosuke
Yamamoto, Hideki
Taniyasu, Yoshitaka
contents SrTiO3 (STO), a promising wide-bandgap semiconductor for high-k capacitors and photocatalysis, requires precise surface control for device fabrication. This study investigates the impact of ion milling on STO's surface conductivity. We find that ion milling at incident angles below 10 degree preserves the insulating state, while ion milling at larger angles induces a conducting surface with high electron mobility (5000-11000 cm2/Vs). This transition is attributed to the milling penetration depth exceeding the STO lattice constant (3.905 Å). Our results provide valuable insights for optimizing STO-based device fabrication, enabling precise control over surface properties while maintaining desired insulating characteristics.
format Preprint
id arxiv_https___arxiv_org_abs_2410_21660
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Role of Ion Milling Angle in Determining Conducting and Insulating States on SrTiO3 Surfaces
Wakabayashia, Yuki K.
Krockenberger, Yoshiharu
Takiguchi, Kosuke
Yamamoto, Hideki
Taniyasu, Yoshitaka
Materials Science
SrTiO3 (STO), a promising wide-bandgap semiconductor for high-k capacitors and photocatalysis, requires precise surface control for device fabrication. This study investigates the impact of ion milling on STO's surface conductivity. We find that ion milling at incident angles below 10 degree preserves the insulating state, while ion milling at larger angles induces a conducting surface with high electron mobility (5000-11000 cm2/Vs). This transition is attributed to the milling penetration depth exceeding the STO lattice constant (3.905 Å). Our results provide valuable insights for optimizing STO-based device fabrication, enabling precise control over surface properties while maintaining desired insulating characteristics.
title Role of Ion Milling Angle in Determining Conducting and Insulating States on SrTiO3 Surfaces
topic Materials Science
url https://arxiv.org/abs/2410.21660