Phase diagrams and edge-state transitions in graphene with spin-orbit coupling and magnetic and pseudomagnetic fields

Fuente: arXiv
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Autores principales: Zhuang, Yu-Chen, Sun, Qing-Feng
Formato: Preprint
Publicado: 2024
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author Zhuang, Yu-Chen
Sun, Qing-Feng
author_facet Zhuang, Yu-Chen
Sun, Qing-Feng
contents The quantum Hall (QH) effect, the quantum spin Hall (QSH) effect and the quantum valley Hall (QVH) effect are three peculiar topological insulating phases in graphene. They are characterized by three different types of edge states. These three effects are caused by the external magnetic field, the intrinsic spin-orbit coupling (SOC) and the strain-induced pseudomagnetic field, respectively. Here we theoretically study phase diagrams when these effects coexist and analyze how the edge states evolve between the three. We find the real magnetic field and the pseudomagnetic field will compete above the SOC energy gap while the QSH effect is almost unaffected within the SOC energy gap. The edge states transition from the QH effect or the QVH effect to the QSH effect directly relies on the arrangement of the zeroth Landau levels. Using edge states transitions, we raise a device similar to a spin field effect transistor (spin-FET) and also design a spintronics multiple-way switch.
format Preprint
id arxiv_https___arxiv_org_abs_2410_21720
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Phase diagrams and edge-state transitions in graphene with spin-orbit coupling and magnetic and pseudomagnetic fields
Zhuang, Yu-Chen
Sun, Qing-Feng
Mesoscale and Nanoscale Physics
The quantum Hall (QH) effect, the quantum spin Hall (QSH) effect and the quantum valley Hall (QVH) effect are three peculiar topological insulating phases in graphene. They are characterized by three different types of edge states. These three effects are caused by the external magnetic field, the intrinsic spin-orbit coupling (SOC) and the strain-induced pseudomagnetic field, respectively. Here we theoretically study phase diagrams when these effects coexist and analyze how the edge states evolve between the three. We find the real magnetic field and the pseudomagnetic field will compete above the SOC energy gap while the QSH effect is almost unaffected within the SOC energy gap. The edge states transition from the QH effect or the QVH effect to the QSH effect directly relies on the arrangement of the zeroth Landau levels. Using edge states transitions, we raise a device similar to a spin field effect transistor (spin-FET) and also design a spintronics multiple-way switch.
title Phase diagrams and edge-state transitions in graphene with spin-orbit coupling and magnetic and pseudomagnetic fields
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2410.21720