High-Throughput Information Storage in An Intelligent Response Phosphor
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arXiv
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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866914996953284608 |
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| author | Gao, Dangli Wang, Zhigang Zhang, Xiangyu Pang, Qing Wang, Xiaojun |
| author_facet | Gao, Dangli Wang, Zhigang Zhang, Xiangyu Pang, Qing Wang, Xiaojun |
| contents | Persistent phosphor has emerged as a promising candidate for information storage due to the rapid accessibility and low-energy requirements. However, the low storage capacity has limited its practical application. Herein, we skillfully designed and developed NaGdGeO4:Pb2+,Tb3+ stimulated phosphor by trace doped Sm3+. As expected, this phosphor demonstrates the larger carrier capacity than traditional commercial SrAl2O4:Eu2+,Dy3+ phosphors and super-strong thermo-stimulated luminescence (TSL) that is three times greater than its photoluminescence (PL) intensity (PL efficiency: 17.3%). A mechanism of the enhanced and controllable TSL is proposed based on electron-hole defect pair structure. We further present a high-throughput optical data recording in five dimensions in a single fluorescent film recording layer. The findings described here provides not only a universal approach for construction TSL materials, but also a new paradigm for future generation optical storage technology. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_22122 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | High-Throughput Information Storage in An Intelligent Response Phosphor Gao, Dangli Wang, Zhigang Zhang, Xiangyu Pang, Qing Wang, Xiaojun Optics Persistent phosphor has emerged as a promising candidate for information storage due to the rapid accessibility and low-energy requirements. However, the low storage capacity has limited its practical application. Herein, we skillfully designed and developed NaGdGeO4:Pb2+,Tb3+ stimulated phosphor by trace doped Sm3+. As expected, this phosphor demonstrates the larger carrier capacity than traditional commercial SrAl2O4:Eu2+,Dy3+ phosphors and super-strong thermo-stimulated luminescence (TSL) that is three times greater than its photoluminescence (PL) intensity (PL efficiency: 17.3%). A mechanism of the enhanced and controllable TSL is proposed based on electron-hole defect pair structure. We further present a high-throughput optical data recording in five dimensions in a single fluorescent film recording layer. The findings described here provides not only a universal approach for construction TSL materials, but also a new paradigm for future generation optical storage technology. |
| title | High-Throughput Information Storage in An Intelligent Response Phosphor |
| topic | Optics |
| url | https://arxiv.org/abs/2410.22122 |