Raman Polarization Switching in CrSBr
Fuente:
arXiv
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2024
|
| Schlagworte: | |
| Online-Zugang: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866912643323789312 |
|---|---|
| author | Mondal, Priyanka Markina, Daria I. Hopf, Lennard Krelle, Lukas Shradha, Sai Klein, Julian Glazov, Mikhail M. Gerber, Iann Hagmann, Kevin Klitzing, Regine v. Mosina, Kseniia Sofer, Zdenek Urbaszek, Bernhard |
| author_facet | Mondal, Priyanka Markina, Daria I. Hopf, Lennard Krelle, Lukas Shradha, Sai Klein, Julian Glazov, Mikhail M. Gerber, Iann Hagmann, Kevin Klitzing, Regine v. Mosina, Kseniia Sofer, Zdenek Urbaszek, Bernhard |
| contents | Semiconducting CrSBr is a layered A-type antiferromagnet, with individual layers antiferromagnetically coupled along the stacking direction. Due to its unique orthorhombic crystal structure, CrSBr exhibits highly anisotropic mechanical and optoelectronic properties acting itself as a quasi-1D material. CrSBr demonstrates complex coupling phenomena involving phonons, excitons, magnons, and polaritons. Here we show through polarization-resolved resonant Raman scattering the intricate interaction between the vibrational and electronic properties of CrSBr. For samples spanning from few-layer to bulk thickness, we observe that the polarization of the A$_g^2$ Raman mode can be rotated by 90 degrees, shifting from alignment with the crystallographic a (intermediate magnetic) axis to the b (easy magnetic) axis, depending on the excitation energy. In contrast, the A$_g^1$ and A$_g^3$ modes consistently remain polarized along the b axis, regardless of the laser energy used. We access real and imaginary parts of the Raman tensor in our analysis, uncovering resonant electron-phonon coupling. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_22164 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Raman Polarization Switching in CrSBr Mondal, Priyanka Markina, Daria I. Hopf, Lennard Krelle, Lukas Shradha, Sai Klein, Julian Glazov, Mikhail M. Gerber, Iann Hagmann, Kevin Klitzing, Regine v. Mosina, Kseniia Sofer, Zdenek Urbaszek, Bernhard Materials Science Mesoscale and Nanoscale Physics Semiconducting CrSBr is a layered A-type antiferromagnet, with individual layers antiferromagnetically coupled along the stacking direction. Due to its unique orthorhombic crystal structure, CrSBr exhibits highly anisotropic mechanical and optoelectronic properties acting itself as a quasi-1D material. CrSBr demonstrates complex coupling phenomena involving phonons, excitons, magnons, and polaritons. Here we show through polarization-resolved resonant Raman scattering the intricate interaction between the vibrational and electronic properties of CrSBr. For samples spanning from few-layer to bulk thickness, we observe that the polarization of the A$_g^2$ Raman mode can be rotated by 90 degrees, shifting from alignment with the crystallographic a (intermediate magnetic) axis to the b (easy magnetic) axis, depending on the excitation energy. In contrast, the A$_g^1$ and A$_g^3$ modes consistently remain polarized along the b axis, regardless of the laser energy used. We access real and imaginary parts of the Raman tensor in our analysis, uncovering resonant electron-phonon coupling. |
| title | Raman Polarization Switching in CrSBr |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2410.22164 |