Aharonov-Bohm interferometer in inverted-band pn junctions

Fuente: arXiv
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Autori principali: Zhao, Yuhao, Zilberberg, Oded, Štrkalj, Antonio
Natura: Preprint
Pubblicazione: 2024
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author Zhao, Yuhao
Zilberberg, Oded
Štrkalj, Antonio
author_facet Zhao, Yuhao
Zilberberg, Oded
Štrkalj, Antonio
contents Inverted-band $pn$ junctions in two-dimensional materials offer a promising platform for electron optics in condensed matter, as they allow to manipulate and guide electron beams without the need for spatial confinement. In this work, we propose the realization of an Aharonov-Bohm (AB) interferometer using such $pn$ junctions. We observe AB oscillations in numerically obtained conductance and analytically identify the conditions for their appearance by analyzing the scattering processes at the $pn$ interface. To support experimental implementation, we also consider junctions with a graded interface, where the potential varies smoothly between the $p$- and $n$-doped regions. Our results reveal an abrupt change in the AB-oscillation frequency, which we attribute to a distinct transition in the hybridization across the interface. We verify that our reported AB oscillations are robust to realistic disorder and temperature decoherence channels. Our study paves the way for realizing the Aharonov-Bohm effect in bulk mesoscopic systems without the need for external spatial confinement, offering new possibilities in electron optics.
format Preprint
id arxiv_https___arxiv_org_abs_2410_22298
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Aharonov-Bohm interferometer in inverted-band pn junctions
Zhao, Yuhao
Zilberberg, Oded
Štrkalj, Antonio
Mesoscale and Nanoscale Physics
Inverted-band $pn$ junctions in two-dimensional materials offer a promising platform for electron optics in condensed matter, as they allow to manipulate and guide electron beams without the need for spatial confinement. In this work, we propose the realization of an Aharonov-Bohm (AB) interferometer using such $pn$ junctions. We observe AB oscillations in numerically obtained conductance and analytically identify the conditions for their appearance by analyzing the scattering processes at the $pn$ interface. To support experimental implementation, we also consider junctions with a graded interface, where the potential varies smoothly between the $p$- and $n$-doped regions. Our results reveal an abrupt change in the AB-oscillation frequency, which we attribute to a distinct transition in the hybridization across the interface. We verify that our reported AB oscillations are robust to realistic disorder and temperature decoherence channels. Our study paves the way for realizing the Aharonov-Bohm effect in bulk mesoscopic systems without the need for external spatial confinement, offering new possibilities in electron optics.
title Aharonov-Bohm interferometer in inverted-band pn junctions
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2410.22298