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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2410.22953 |
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| _version_ | 1866917823459098624 |
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| author | Cheng, Jinhao Wang, Chen He, Wenxue Wang, Jiaojiao Pang, Yifan Yang, Fan Ding, Shuaishuai Ren, Hechen Hu, Wenping |
| author_facet | Cheng, Jinhao Wang, Chen He, Wenxue Wang, Jiaojiao Pang, Yifan Yang, Fan Ding, Shuaishuai Ren, Hechen Hu, Wenping |
| contents | Anderson localization transitions are a universal quantum phenomenon sensitive to the disorder and dimensionality of electronic systems. Over the past decades, this intriguing topic has inspired overwhelmingly more theoretical studies than experimental verifications due to the difficulty of controlling a material's disorder or dimensionality without modifying its fundamental electronic properties. Organic crystals with their rich disorders would be terrific playgrounds to investigate such disorder-driven phase transitions except for their low conductivities which usually prohibit low-temperature measurements. Here, we conduct systematic transport experiments in mesoscopic devices made with copper benzenehexathiol thin films across a wide range of thicknesses. We find metal-insulator transitions both among three-dimensional samples with different disorder strengths and between three-dimensional and quasi-two-dimensional samples. Temperature-dependence analysis of the conductivities corroborates the dimensionality crossover. Moreover, our theoretical modeling provides a basis for understanding both types of metal-insulator transitions within the framework of Anderson localization transitions. Our findings establish for the first time that organic crystals such as conductive metal-organic frameworks can exhibit such quantum interference effects. With organic materials' versatile chemical designs and crystalline structures, our work opens new avenues to search for novel quantum phenomena in organic material platforms. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_22953 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Observation of Anderson localization transitions in a two-dimensional conjugated metal-organic framework Cheng, Jinhao Wang, Chen He, Wenxue Wang, Jiaojiao Pang, Yifan Yang, Fan Ding, Shuaishuai Ren, Hechen Hu, Wenping Mesoscale and Nanoscale Physics Materials Science Anderson localization transitions are a universal quantum phenomenon sensitive to the disorder and dimensionality of electronic systems. Over the past decades, this intriguing topic has inspired overwhelmingly more theoretical studies than experimental verifications due to the difficulty of controlling a material's disorder or dimensionality without modifying its fundamental electronic properties. Organic crystals with their rich disorders would be terrific playgrounds to investigate such disorder-driven phase transitions except for their low conductivities which usually prohibit low-temperature measurements. Here, we conduct systematic transport experiments in mesoscopic devices made with copper benzenehexathiol thin films across a wide range of thicknesses. We find metal-insulator transitions both among three-dimensional samples with different disorder strengths and between three-dimensional and quasi-two-dimensional samples. Temperature-dependence analysis of the conductivities corroborates the dimensionality crossover. Moreover, our theoretical modeling provides a basis for understanding both types of metal-insulator transitions within the framework of Anderson localization transitions. Our findings establish for the first time that organic crystals such as conductive metal-organic frameworks can exhibit such quantum interference effects. With organic materials' versatile chemical designs and crystalline structures, our work opens new avenues to search for novel quantum phenomena in organic material platforms. |
| title | Observation of Anderson localization transitions in a two-dimensional conjugated metal-organic framework |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2410.22953 |