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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2410.23755 |
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Table of Contents:
- Hg$_{1-x}$Cd$_x$Te is a unique material with the band-gap tunable by the temperature, pressure, and cadmium content in a wide range, from 1.6 eV to inverted band-gap of -0.3 eV. This makes Hg$_{1-x}$Cd$_x$Te one of the key materials for infrared and terahertz detectors, whose characteristics largely depend on the material noise properties. In this work, we investigated the low-frequency 1/f noise in a thick (800 nm) HgCdTe layer and in a field effect transistor (FET) with an 8 nm wide HgTe quantum well. Both structures exhibited a small contribution from contact noise and showed weak noise dependences on temperature. Investigation of the 1/f noise in HgTe quantum well FET as a function of gate voltage revealed that the noise also depends weakly on electron concentration. These findings indicate that the noise properties of Hg$_{1-x}$Cd$_x$Te are similar to those of graphene, where mobility fluctuations were found to be the dominant mechanism of the 1/f noise.