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Bibliographic Details
Main Authors: Erhardt, Nina Girotto, Castellano, Aloïs, Batista, J. P. Alvarinhas, Bianco, Raffaello, Lončarić, Ivor, Verstraete, Matthieu J., Novko, Dino
Format: Preprint
Published: 2024
Subjects:
Online Access:https://arxiv.org/abs/2410.23791
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Table of Contents:
  • The Raman active G mode in graphene exhibits strong coupling to electrons, yet the comprehensive treatment of this interaction in the calculation of its temperature-dependent Raman spectrum remains incomplete. In this study, we calculate the temperature dependence of the G mode frequency and linewidth, and successfully explain the experimental trend, by accounting for the contributions arising from the first-order electron-phonon coupling, electron-mediated phonon-phonon coupling, and standard lattice anharmonicity. The generality of our approach enables its broad applicability to study phonon dynamics in materials where both electron-phonon coupling and anharmonicity are important.