A Toffoli Gadget for Magnetic Tunnel Junctions Boltzmann Machines
Fuente:
arXiv
Gespeichert in:
| Hauptverfasser: | , , , , , , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2024
|
| Schlagworte: | |
| Online-Zugang: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866909595226603520 |
|---|---|
| author | Chen, Dairong Wyporek, Augustin Couton Chailloleau, Pierre Valli, Ahmed Sidi El Morone, Flaviano Mangin, Stephane Sun, Jonathan Z. Sels, Dries Kent, Andrew D. |
| author_facet | Chen, Dairong Wyporek, Augustin Couton Chailloleau, Pierre Valli, Ahmed Sidi El Morone, Flaviano Mangin, Stephane Sun, Jonathan Z. Sels, Dries Kent, Andrew D. |
| contents | Magnetic Tunnel Junctions (MTJs) are of great interest for non-conventional computing applications. The Toffoli gate is a universal reversible logic gate, enabling the construction of arbitrary boolean circuits. Here, we present a proof-of-concept construction of a gadget which encodes the Toffoli gate's truth table into the ground state of coupled uniaxial nanomagnets that could form the free layers of perpendicularly magnetized MTJs. This construction has three input bits, three output bits, and one ancilla bit. We numerically simulate the seven macrospins evolving under the stochastic Landau-Lifshitz-Gilbert (s-LLG) equation. We investigate the effect of the anisotropy-to-exchange-coupling strength ratio $H_A/H_\text{ex}$ on the working of the gadget. We find that for $H_A/H_\text{ex} \lesssim 0.93$, the spins evolve to the Toffoli gate truth table configurations under LLG dynamics alone, while higher $H_A/H_\text{ex}$ ratios require thermal annealing due to suboptimal metastable states. Under our chosen annealing procedure, the s-LLG simulation with thermal annealing achieves a 100% success rate up to $H_A/H_\text{ex}\simeq3.0$. The feasibility of constructing MTJ-free-layer-based Toffoli gates highlights their potential in designing new types of MTJ-based circuits. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_00203 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | A Toffoli Gadget for Magnetic Tunnel Junctions Boltzmann Machines Chen, Dairong Wyporek, Augustin Couton Chailloleau, Pierre Valli, Ahmed Sidi El Morone, Flaviano Mangin, Stephane Sun, Jonathan Z. Sels, Dries Kent, Andrew D. Mesoscale and Nanoscale Physics Applied Physics Magnetic Tunnel Junctions (MTJs) are of great interest for non-conventional computing applications. The Toffoli gate is a universal reversible logic gate, enabling the construction of arbitrary boolean circuits. Here, we present a proof-of-concept construction of a gadget which encodes the Toffoli gate's truth table into the ground state of coupled uniaxial nanomagnets that could form the free layers of perpendicularly magnetized MTJs. This construction has three input bits, three output bits, and one ancilla bit. We numerically simulate the seven macrospins evolving under the stochastic Landau-Lifshitz-Gilbert (s-LLG) equation. We investigate the effect of the anisotropy-to-exchange-coupling strength ratio $H_A/H_\text{ex}$ on the working of the gadget. We find that for $H_A/H_\text{ex} \lesssim 0.93$, the spins evolve to the Toffoli gate truth table configurations under LLG dynamics alone, while higher $H_A/H_\text{ex}$ ratios require thermal annealing due to suboptimal metastable states. Under our chosen annealing procedure, the s-LLG simulation with thermal annealing achieves a 100% success rate up to $H_A/H_\text{ex}\simeq3.0$. The feasibility of constructing MTJ-free-layer-based Toffoli gates highlights their potential in designing new types of MTJ-based circuits. |
| title | A Toffoli Gadget for Magnetic Tunnel Junctions Boltzmann Machines |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2411.00203 |