Defect engineering-induced Seebeck coefficient and carrier concentration decoupling in CuI by noble gas ion implantation

Fuente: arXiv

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Bibliographic Details
Main Authors:	Markwitz, Martin, Murmu, Peter P., Mori, Takao, Kennedy, John V., Ruck, Ben J.
Format:	Preprint
Published:	2024
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2411.01015