Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2411.01148 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866913570440085504 |
|---|---|
| author | Imakire, K. Oiwa, A. Tokura, Y. |
| author_facet | Imakire, K. Oiwa, A. Tokura, Y. |
| contents | For photon-spin conversion, the Ge hole system in a strained GeSi/Ge quantum well with a diamond structure has attracted significant attention because of the potential for a high-performance spin qubit and optical transitions ranging in telecom bands. We calculated the electron g-factor for strained Ge, analyzing its dependence on both the growth directions ([100], [110], and [111]) and the Ge content of the SiGe substrate using an 8-band model. Our results indicate that the absolute values of the electron g-factor decrease with decreasing Ge content, ranging from approximately -3.0 to -1.4 for all growth directions. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_01148 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electron g-factor of strained Ge caused by the SiGe substrate and its dependence on growth directions Imakire, K. Oiwa, A. Tokura, Y. Mesoscale and Nanoscale Physics Materials Science Quantum Physics For photon-spin conversion, the Ge hole system in a strained GeSi/Ge quantum well with a diamond structure has attracted significant attention because of the potential for a high-performance spin qubit and optical transitions ranging in telecom bands. We calculated the electron g-factor for strained Ge, analyzing its dependence on both the growth directions ([100], [110], and [111]) and the Ge content of the SiGe substrate using an 8-band model. Our results indicate that the absolute values of the electron g-factor decrease with decreasing Ge content, ranging from approximately -3.0 to -1.4 for all growth directions. |
| title | Electron g-factor of strained Ge caused by the SiGe substrate and its dependence on growth directions |
| topic | Mesoscale and Nanoscale Physics Materials Science Quantum Physics |
| url | https://arxiv.org/abs/2411.01148 |