Image de couverture de livre

Electron g-factor of strained Ge caused by the SiGe substrate and its dependence on growth directions

Fuente: arXiv

Enregistré dans:

Détails bibliographiques
Auteurs principaux:	Imakire, K., Oiwa, A., Tokura, Y.
Format:	Preprint
Publié:	2024
Sujets:	Mesoscale and Nanoscale Physics Materials Science Quantum Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

Documents similaires

g-tensor Optimization in Ge/SiGe Quantum Dots
par: Shojaei, Aram, et autres
Publié: (2026)

Disentangling orbital and confinement contributions to $g$-factor in Ge/SiGe hole quantum dots
par: Sommer, L., et autres
Publié: (2026)

Electrical Characterization of hexagonal SiGe
par: Bollier, Isabelle, et autres
Publié: (2025)

Reducing disorder in Ge quantum wells by using thick SiGe barriers
par: Costa, Davide, et autres
Publié: (2024)

Refining Au/Sb alloyed ohmic contacts in undoped Si/SiGe strained quantum wells
par: Kynshi, LuckyDonald L, et autres
Publié: (2025)

Theory of Valley Splitting in Si/SiGe Spin-Qubits: Interplay of Strain, Resonances and Random Alloy Disorder
par: Thayil, Abel, et autres
Publié: (2024)

g-factor theory of Si/SiGe quantum dots: spin-valley and giant renormalization effects
par: Woods, Benjamin D., et autres
Publié: (2024)

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations
par: Woods, Benjamin D., et autres
Publié: (2023)

Heavy Hole vs. Light Hole Spin Qubits: A Strain-Driven Study of SiGe/Ge and GeSn/Ge
par: Dsouza, Kelvin, et autres
Publié: (2024)

Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers
par: Daoust, P., et autres
Publié: (2025)

Anisotropy reduction and tunability of hole-spin qubit g-factor in strained parabolic Ge/SiGe quantum wells
par: Colmenar, R. K. L., et autres
Publié: (2026)

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits
par: Kong, Zhenzhen, et autres
Publié: (2024)

First-principles predictions of band alignment in strained Si/Si1-xGex and Ge/Si1-xGex heterostructures
par: Vegh, Nathaniel M., et autres
Publié: (2026)

On-chip cryogenic multiplexing of Si/SiGe quantum devices
par: Wolfe, M. A., et autres
Publié: (2024)

High-fidelity EDSR in Si/SiGe Wiggle Wells
par: Soomro, Hudaiba, et autres
Publié: (2026)

Statistical characterization of valley coupling in Si/SiGe quantum dots via $g$-factor measurements near a valley vortex
par: Woods, Benjamin D., et autres
Publié: (2025)

Statistical Structure of Charge Disorder in Si/SiGe Quantum Dots
par: Samadi, Saeed, et autres
Publié: (2025)

Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
par: Németh, Róbert, et autres
Publié: (2024)

Characterization of individual charge fluctuators in Si/SiGe quantum dots
par: Ye, Feiyang, et autres
Publié: (2024)

Conveyor-mode electron shuttling through a T-junction in Si/SiGe
par: Beer, Max, et autres
Publié: (2026)

Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot
par: Ye, Feiyang, et autres
Publié: (2024)

Anisotropic spin-valley coupling in SiMOS and Si/SiGe quantum dots
par: Jacobson, N. Tobias, et autres
Publié: (2026)

Control of threshold voltages in Si/SiGe quantum devices via optical illumination
par: Wolfe, M. A., et autres
Publié: (2023)

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
par: Ma, Jingrui, et autres
Publié: (2026)

Multi-level charge fluctuations in a Si/SiGe double quantum dot device
par: Albrecht, Dylan, et autres
Publié: (2026)

Smooth velocity shuttling for suppressing valley excitations in disordered Si/SiGe quantum dots
par: Nagai, Ryo, et autres
Publié: (2026)

Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
par: Struck, Tom, et autres
Publié: (2023)

Individually tunable Si/SiGe quantum dot operating voltages via gate-biased illumination
par: Benson, Jared, et autres
Publié: (2026)

Low-loss frequency-tunable Josephson junction array cavities on Ge/SiGe heterostructures with a tapered etching approach
par: De Palma, Franco, et autres
Publié: (2025)

Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure
par: Kępa, Marcin, et autres
Publié: (2023)

Benchmarking low-power flopping-mode spin qubit fidelities in Si/SiGe devices with alloy disorder
par: Young, Steve M., et autres
Publié: (2025)

Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
par: Stehouwer, Lucas E. A., et autres
Publié: (2025)

Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
par: Cakar, Efe, et autres
Publié: (2024)

Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function
par: Xue, Ran, et autres
Publié: (2023)

Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements
par: Roux, Marc-Antoine, et autres
Publié: (2025)

Disorder-broadened topological Hall phase and anomalous Hall scaling in FeGe
par: Gupta, Chaman, et autres
Publié: (2025)

Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells
par: Huang, Yi, et autres
Publié: (2023)

Coherence of a field-gradient-driven singlet-triplet qubit coupled to many-electron spin states in 28Si/SiGe
par: Song, Younguk, et autres
Publié: (2023)

Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and Ge$_{1-x}$Sn$_{x}$
par: Corley-Wiciak, Agnieszka Anna, et autres
Publié: (2024)

Phonon-Induced Exchange Gate Infidelities in Semiconducting Si-SiGe Spin Qubits
par: Brooks, Matthew, et autres
Publié: (2024)