Quench switching of Mn2As
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arXiv
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| Autori principali: | , , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866929574833553408 |
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| author | Olejník, Kamil Kašpar, Zdeněk Zubáč, Jan Telkamp, Sjoerd Farkaš, Andrej Kriegner, Dominik Výborný, Karel Železný, Jakub Šobáň, Zbyněk Zeng, Peng Jungwirth, Tomáš Novák, Vít Krizek, Filip |
| author_facet | Olejník, Kamil Kašpar, Zdeněk Zubáč, Jan Telkamp, Sjoerd Farkaš, Andrej Kriegner, Dominik Výborný, Karel Železný, Jakub Šobáň, Zbyněk Zeng, Peng Jungwirth, Tomáš Novák, Vít Krizek, Filip |
| contents | We demonstrate that epitaxial thin film antiferromagnet Mn2As exhibits the quench-switching effect, which was previously reported only in crystallographically similar antiferromagnetic CuMnAs thin films. Quench switching in Mn2As shows stronger increase in resistivity, reaching hundreds of percent at 5K, and significantly longer retention time of the metastable high-resistive state before relaxation towards the low-resistive uniform magnetic state. Qualitatively, Mn2As and CuMnAs show analogous parametric dependence of the magnitude and relaxation of the quench-switching signal. Quantitatively, relaxation dynamics in both materials show direct proportionality to the Néel temperature. This confirms that the quench switching has magnetic origin in both materials. The presented results suggest that the antiferromagnets crystalizing in the Cu2Sb structure are well suited for exploring and exploiting the intriguing physics of highly non-uniform magnetic states associated with the quench switching. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_01930 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Quench switching of Mn2As Olejník, Kamil Kašpar, Zdeněk Zubáč, Jan Telkamp, Sjoerd Farkaš, Andrej Kriegner, Dominik Výborný, Karel Železný, Jakub Šobáň, Zbyněk Zeng, Peng Jungwirth, Tomáš Novák, Vít Krizek, Filip Materials Science Soft Condensed Matter We demonstrate that epitaxial thin film antiferromagnet Mn2As exhibits the quench-switching effect, which was previously reported only in crystallographically similar antiferromagnetic CuMnAs thin films. Quench switching in Mn2As shows stronger increase in resistivity, reaching hundreds of percent at 5K, and significantly longer retention time of the metastable high-resistive state before relaxation towards the low-resistive uniform magnetic state. Qualitatively, Mn2As and CuMnAs show analogous parametric dependence of the magnitude and relaxation of the quench-switching signal. Quantitatively, relaxation dynamics in both materials show direct proportionality to the Néel temperature. This confirms that the quench switching has magnetic origin in both materials. The presented results suggest that the antiferromagnets crystalizing in the Cu2Sb structure are well suited for exploring and exploiting the intriguing physics of highly non-uniform magnetic states associated with the quench switching. |
| title | Quench switching of Mn2As |
| topic | Materials Science Soft Condensed Matter |
| url | https://arxiv.org/abs/2411.01930 |