Quench switching of Mn2As

Fuente: arXiv
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Autori principali: Olejník, Kamil, Kašpar, Zdeněk, Zubáč, Jan, Telkamp, Sjoerd, Farkaš, Andrej, Kriegner, Dominik, Výborný, Karel, Železný, Jakub, Šobáň, Zbyněk, Zeng, Peng, Jungwirth, Tomáš, Novák, Vít, Krizek, Filip
Natura: Preprint
Pubblicazione: 2024
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author Olejník, Kamil
Kašpar, Zdeněk
Zubáč, Jan
Telkamp, Sjoerd
Farkaš, Andrej
Kriegner, Dominik
Výborný, Karel
Železný, Jakub
Šobáň, Zbyněk
Zeng, Peng
Jungwirth, Tomáš
Novák, Vít
Krizek, Filip
author_facet Olejník, Kamil
Kašpar, Zdeněk
Zubáč, Jan
Telkamp, Sjoerd
Farkaš, Andrej
Kriegner, Dominik
Výborný, Karel
Železný, Jakub
Šobáň, Zbyněk
Zeng, Peng
Jungwirth, Tomáš
Novák, Vít
Krizek, Filip
contents We demonstrate that epitaxial thin film antiferromagnet Mn2As exhibits the quench-switching effect, which was previously reported only in crystallographically similar antiferromagnetic CuMnAs thin films. Quench switching in Mn2As shows stronger increase in resistivity, reaching hundreds of percent at 5K, and significantly longer retention time of the metastable high-resistive state before relaxation towards the low-resistive uniform magnetic state. Qualitatively, Mn2As and CuMnAs show analogous parametric dependence of the magnitude and relaxation of the quench-switching signal. Quantitatively, relaxation dynamics in both materials show direct proportionality to the Néel temperature. This confirms that the quench switching has magnetic origin in both materials. The presented results suggest that the antiferromagnets crystalizing in the Cu2Sb structure are well suited for exploring and exploiting the intriguing physics of highly non-uniform magnetic states associated with the quench switching.
format Preprint
id arxiv_https___arxiv_org_abs_2411_01930
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Quench switching of Mn2As
Olejník, Kamil
Kašpar, Zdeněk
Zubáč, Jan
Telkamp, Sjoerd
Farkaš, Andrej
Kriegner, Dominik
Výborný, Karel
Železný, Jakub
Šobáň, Zbyněk
Zeng, Peng
Jungwirth, Tomáš
Novák, Vít
Krizek, Filip
Materials Science
Soft Condensed Matter
We demonstrate that epitaxial thin film antiferromagnet Mn2As exhibits the quench-switching effect, which was previously reported only in crystallographically similar antiferromagnetic CuMnAs thin films. Quench switching in Mn2As shows stronger increase in resistivity, reaching hundreds of percent at 5K, and significantly longer retention time of the metastable high-resistive state before relaxation towards the low-resistive uniform magnetic state. Qualitatively, Mn2As and CuMnAs show analogous parametric dependence of the magnitude and relaxation of the quench-switching signal. Quantitatively, relaxation dynamics in both materials show direct proportionality to the Néel temperature. This confirms that the quench switching has magnetic origin in both materials. The presented results suggest that the antiferromagnets crystalizing in the Cu2Sb structure are well suited for exploring and exploiting the intriguing physics of highly non-uniform magnetic states associated with the quench switching.
title Quench switching of Mn2As
topic Materials Science
Soft Condensed Matter
url https://arxiv.org/abs/2411.01930