Electronic properties of metamorphic GaSbBi films on GaAs
Fuente:
arXiv
Guardado en:
| Autores principales: | , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2024
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866910682798096384 |
|---|---|
| author | Hilska, Joonas Puustinen, Janne Koivusalo, Eero Guina, Mircea |
| author_facet | Hilska, Joonas Puustinen, Janne Koivusalo, Eero Guina, Mircea |
| contents | We report on the electronic, structural, and optical properties of epitaxial GaSbBi films with varying Bi-concentration (up to 7%Bi) grown on semi-insulating GaAs(100) substrates. The 1 $μ$m thick GaSbBi epilayers exhibit fully relaxed narrow X-ray diffraction peaks and smooth surface morphology comparable to that of high-quality GaSb epilayers on GaAs. Low temperature photoluminescence spectra exhibit band gap shrinkage consistent with Bi alloying. Electrical Hall measurements indicate reduction of hole concentration and no change in the hole mobilities with increasing Bi content for the nominally undoped GaSbBi alloy. The residual hole concentration reduces from $10^{18} cm^{-3}$ level for a reference GaSb sample, to low $10^{17} cm^{-3}$ level with increasing Bi content. Hole mobility values of around $300 cm^{2}/Vs$ are observed independent of the Bi content. These dependencies are attributed to the Bi surfactant effect and Bi-induced defect formation. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_01937 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electronic properties of metamorphic GaSbBi films on GaAs Hilska, Joonas Puustinen, Janne Koivusalo, Eero Guina, Mircea Materials Science Applied Physics We report on the electronic, structural, and optical properties of epitaxial GaSbBi films with varying Bi-concentration (up to 7%Bi) grown on semi-insulating GaAs(100) substrates. The 1 $μ$m thick GaSbBi epilayers exhibit fully relaxed narrow X-ray diffraction peaks and smooth surface morphology comparable to that of high-quality GaSb epilayers on GaAs. Low temperature photoluminescence spectra exhibit band gap shrinkage consistent with Bi alloying. Electrical Hall measurements indicate reduction of hole concentration and no change in the hole mobilities with increasing Bi content for the nominally undoped GaSbBi alloy. The residual hole concentration reduces from $10^{18} cm^{-3}$ level for a reference GaSb sample, to low $10^{17} cm^{-3}$ level with increasing Bi content. Hole mobility values of around $300 cm^{2}/Vs$ are observed independent of the Bi content. These dependencies are attributed to the Bi surfactant effect and Bi-induced defect formation. |
| title | Electronic properties of metamorphic GaSbBi films on GaAs |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2411.01937 |