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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2411.02054 |
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| _version_ | 1866909377044152320 |
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| author | Sanjay, Sooraj A, Jalaja M. Bhat, Navakanta Nukala, Pavan |
| author_facet | Sanjay, Sooraj A, Jalaja M. Bhat, Navakanta Nukala, Pavan |
| contents | Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for steep switching applications. Our gate stack is engineered as a ferroelectric Lanthanum doped hafnium oxide (LHO) proximity coupled with Mott insulator Ti$_x$O$_{2x-1}$(N$_y$) and is integrated onto a 2D MoS$_2$ channel. The interplay of partial polarization switching in the ferroelectric LHO layer and reversible field-tunable metal-insulator transition (MIT) in Ti$_x$O$_{2x-1}$(N$_y$) layer concomitantly triggers polar to non-polar phase transition in the LHO layer between 200 and 220 K. This results in distinctive step-like features in the channel current during DC measurements, and random current fluctuations in high-speed measurements with slim anticlockwise hysteresis. Our devices show subthreshold slopes as steep as 25 mV/dec at 210 K, breaking the Boltzmann limit. Our gate stack is also potentially tunable for operation at temperatures of interest, presenting innovative gate stack engineering approaches for low-power computing solutions. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_02054 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Hafnia-based Phase-Change Ferroelectric Steep-Switching FETs on a 2-D MoS$_2$ platform Sanjay, Sooraj A, Jalaja M. Bhat, Navakanta Nukala, Pavan Applied Physics Materials Science Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for steep switching applications. Our gate stack is engineered as a ferroelectric Lanthanum doped hafnium oxide (LHO) proximity coupled with Mott insulator Ti$_x$O$_{2x-1}$(N$_y$) and is integrated onto a 2D MoS$_2$ channel. The interplay of partial polarization switching in the ferroelectric LHO layer and reversible field-tunable metal-insulator transition (MIT) in Ti$_x$O$_{2x-1}$(N$_y$) layer concomitantly triggers polar to non-polar phase transition in the LHO layer between 200 and 220 K. This results in distinctive step-like features in the channel current during DC measurements, and random current fluctuations in high-speed measurements with slim anticlockwise hysteresis. Our devices show subthreshold slopes as steep as 25 mV/dec at 210 K, breaking the Boltzmann limit. Our gate stack is also potentially tunable for operation at temperatures of interest, presenting innovative gate stack engineering approaches for low-power computing solutions. |
| title | Hafnia-based Phase-Change Ferroelectric Steep-Switching FETs on a 2-D MoS$_2$ platform |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2411.02054 |