GaAs doped by self-assembled molecular monolayers
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arXiv
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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866917828074930176 |
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| author | Fan, Zhengfang Liu, Yumeng Wang, Yizuo Guo, Shuwen He, Li Dan, Yaping |
| author_facet | Fan, Zhengfang Liu, Yumeng Wang, Yizuo Guo, Shuwen He, Li Dan, Yaping |
| contents | Self-assembled molecular monolayer doping remains as a research focus for its nature of being conformal, nondestructive, and self-limiting. Herein, we demonstrate a sulfur monolayer doping in GaAs, facilitated by (NH4)2Sx solution. The Van der Pauw technique, secondary-ion mass spectroscopy, and low-temperature Hall effect measurements show that the sulfur dopants concentration and electron activation rate are 4*10^20 cm-3 and 77.6%, respectively. The donor energy level of sulfur-doped GaAs is located 68 meV below the conduction band. Based on this process, a p-n junction was successfully fabricated on highly doped p-type GaAs substrate. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2411_02235 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | GaAs doped by self-assembled molecular monolayers Fan, Zhengfang Liu, Yumeng Wang, Yizuo Guo, Shuwen He, Li Dan, Yaping Materials Science Mesoscale and Nanoscale Physics Self-assembled molecular monolayer doping remains as a research focus for its nature of being conformal, nondestructive, and self-limiting. Herein, we demonstrate a sulfur monolayer doping in GaAs, facilitated by (NH4)2Sx solution. The Van der Pauw technique, secondary-ion mass spectroscopy, and low-temperature Hall effect measurements show that the sulfur dopants concentration and electron activation rate are 4*10^20 cm-3 and 77.6%, respectively. The donor energy level of sulfur-doped GaAs is located 68 meV below the conduction band. Based on this process, a p-n junction was successfully fabricated on highly doped p-type GaAs substrate. |
| title | GaAs doped by self-assembled molecular monolayers |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2411.02235 |