Gatemon qubit on a germanium quantum-well heterostructure
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arXiv
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| Auteurs principaux: | , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866929639284277248 |
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| author | Kiyooka, Elyjah Tangchingchai, Chotivut Noirot, Leo Leblanc, Axel Brun, Boris Zihlmann, Simon Maurand, Romain Schmitt, Vivien Dumur, Étienne Hartmann, Jean-Michel Lefloch, Francois De Franceschi, Silvano |
| author_facet | Kiyooka, Elyjah Tangchingchai, Chotivut Noirot, Leo Leblanc, Axel Brun, Boris Zihlmann, Simon Maurand, Romain Schmitt, Vivien Dumur, Étienne Hartmann, Jean-Michel Lefloch, Francois De Franceschi, Silvano |
| contents | Gatemons are superconducting qubits resembling transmons, with a gate-tunable semiconducting weak link as the Josephson element. Here, we report a gatemon device featuring an aluminum microwave circuit on a Ge/SiGe heterostructure embedding a Ge quantum well. Owing to the superconducting proximity effect, the high-mobility two-dimensional hole gas confined in this well provides a gate-tunable superconducting weak link between two Al contacts. We perform Rabi oscillation and Ramsey interference measurements, demonstrate the gate-voltage dependence of the qubit frequency, and measure the qubit anharmonicity. We find relaxation times T$_{1}$ up to 119 ns, and Ramsey coherence times T$^{*}_{2}$ up to 70 ns, and a qubit frequency gate-tunable over 3.5 GHz. The reported proof-of-concept reproduces the results of a very recent work [Sagi et al., Nat. Commun. 15, 6400 (2024)] using similar Ge/SiGe heterostructures thereby validating a novel platform for the development of gatemons and parity-protected cos(2$ϕ$) qubits. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_02367 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Gatemon qubit on a germanium quantum-well heterostructure Kiyooka, Elyjah Tangchingchai, Chotivut Noirot, Leo Leblanc, Axel Brun, Boris Zihlmann, Simon Maurand, Romain Schmitt, Vivien Dumur, Étienne Hartmann, Jean-Michel Lefloch, Francois De Franceschi, Silvano Mesoscale and Nanoscale Physics Gatemons are superconducting qubits resembling transmons, with a gate-tunable semiconducting weak link as the Josephson element. Here, we report a gatemon device featuring an aluminum microwave circuit on a Ge/SiGe heterostructure embedding a Ge quantum well. Owing to the superconducting proximity effect, the high-mobility two-dimensional hole gas confined in this well provides a gate-tunable superconducting weak link between two Al contacts. We perform Rabi oscillation and Ramsey interference measurements, demonstrate the gate-voltage dependence of the qubit frequency, and measure the qubit anharmonicity. We find relaxation times T$_{1}$ up to 119 ns, and Ramsey coherence times T$^{*}_{2}$ up to 70 ns, and a qubit frequency gate-tunable over 3.5 GHz. The reported proof-of-concept reproduces the results of a very recent work [Sagi et al., Nat. Commun. 15, 6400 (2024)] using similar Ge/SiGe heterostructures thereby validating a novel platform for the development of gatemons and parity-protected cos(2$ϕ$) qubits. |
| title | Gatemon qubit on a germanium quantum-well heterostructure |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2411.02367 |