Straintronic magnetic tunnel junctions for analog computation: A perspective
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arXiv
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866915180190892032 |
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| author | Bandyopadhyay, Supriyo |
| author_facet | Bandyopadhyay, Supriyo |
| contents | The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature, not usually available in MTJs that are switched abruptly with spin transfer torque, spin-orbit torque or voltage-controlled-magnetic-anisotropy, enables many analog applications where the typically low tunneling magneto-resistance ratio of MTJs (on/off ratio of the switch) and the relatively large switching error rate are not serious impediments unlike in digital logic or memory. More importantly, the transfer characteristic of a s-MTJ (conductance versus gate voltage) always sports a linear region that can be exploited to implement analog arithmetic, vector matrix multiplication and linear synapses in deep learning networks very effectively. In these applications, the s-MTJ is actually superior to the better known memristors and domain wall synapses which do not exhibit the linearity and/or the analog behavior. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_02636 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Straintronic magnetic tunnel junctions for analog computation: A perspective Bandyopadhyay, Supriyo Mesoscale and Nanoscale Physics Systems and Control The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature, not usually available in MTJs that are switched abruptly with spin transfer torque, spin-orbit torque or voltage-controlled-magnetic-anisotropy, enables many analog applications where the typically low tunneling magneto-resistance ratio of MTJs (on/off ratio of the switch) and the relatively large switching error rate are not serious impediments unlike in digital logic or memory. More importantly, the transfer characteristic of a s-MTJ (conductance versus gate voltage) always sports a linear region that can be exploited to implement analog arithmetic, vector matrix multiplication and linear synapses in deep learning networks very effectively. In these applications, the s-MTJ is actually superior to the better known memristors and domain wall synapses which do not exhibit the linearity and/or the analog behavior. |
| title | Straintronic magnetic tunnel junctions for analog computation: A perspective |
| topic | Mesoscale and Nanoscale Physics Systems and Control |
| url | https://arxiv.org/abs/2411.02636 |