One-step synthesis of graphene containing topological defects
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arXiv
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| Autores principales: | , , , , , , , , , , , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| author | Klein, Benedikt P. Stoodley, Matthew A. Deyerling, Joel Rochford, Luke A. Morgan, Dylan B. Hopkinson, David Sullivan-Allsop, Sam Eratam, Fulden Sattler, Lars Weber, Sebastian M. Hilt, Gerhard Generalov, Alexander Preobrajenski, Alexei Liddy, Thomas Williams, Leon B. S. Lee, Tien-Lin Saywell, Alex Gorbachev, Roman Haigh, Sarah J. Allen, Christopher Auwärter, Willi Maurer, Reinhard J. Duncan, David A. |
| author_facet | Klein, Benedikt P. Stoodley, Matthew A. Deyerling, Joel Rochford, Luke A. Morgan, Dylan B. Hopkinson, David Sullivan-Allsop, Sam Eratam, Fulden Sattler, Lars Weber, Sebastian M. Hilt, Gerhard Generalov, Alexander Preobrajenski, Alexei Liddy, Thomas Williams, Leon B. S. Lee, Tien-Lin Saywell, Alex Gorbachev, Roman Haigh, Sarah J. Allen, Christopher Auwärter, Willi Maurer, Reinhard J. Duncan, David A. |
| contents | Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used as a precursor, carbonaceous monolayers with a range of morphologies are produced as a function of the copper substrate growth temperature. The higher the substrate temperature during deposition, the closer the resulting monolayer is to ideal graphene. Analysis, with a set of complementary materials characterisation techniques, reveals morphological changes closely correlated with changes in the atomic adsorption heights, network topology, and concentration of 5-/7-membered carbon rings. The engineered defective carbon monolayers can be transferred to different substrates, potentially enabling applications in nanoelectronics, sensorics, and catalysis. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_02676 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | One-step synthesis of graphene containing topological defects Klein, Benedikt P. Stoodley, Matthew A. Deyerling, Joel Rochford, Luke A. Morgan, Dylan B. Hopkinson, David Sullivan-Allsop, Sam Eratam, Fulden Sattler, Lars Weber, Sebastian M. Hilt, Gerhard Generalov, Alexander Preobrajenski, Alexei Liddy, Thomas Williams, Leon B. S. Lee, Tien-Lin Saywell, Alex Gorbachev, Roman Haigh, Sarah J. Allen, Christopher Auwärter, Willi Maurer, Reinhard J. Duncan, David A. Materials Science Mesoscale and Nanoscale Physics Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used as a precursor, carbonaceous monolayers with a range of morphologies are produced as a function of the copper substrate growth temperature. The higher the substrate temperature during deposition, the closer the resulting monolayer is to ideal graphene. Analysis, with a set of complementary materials characterisation techniques, reveals morphological changes closely correlated with changes in the atomic adsorption heights, network topology, and concentration of 5-/7-membered carbon rings. The engineered defective carbon monolayers can be transferred to different substrates, potentially enabling applications in nanoelectronics, sensorics, and catalysis. |
| title | One-step synthesis of graphene containing topological defects |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2411.02676 |