High temperature diffusion enabled epitaxy of the Ti-O system
Fuente:
arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866916468389576704 |
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| author | Kim, Jeong Rae Glotzer, Sandra Llanos, Adrian Salmani-Rezaie, Salva Falson, Joseph |
| author_facet | Kim, Jeong Rae Glotzer, Sandra Llanos, Adrian Salmani-Rezaie, Salva Falson, Joseph |
| contents | High temperatures promote kinetic processes which can drive crystal synthesis towards ideal thermodynamic conditions, thereby realizing samples of superior quality. While accessing very high temperatures in thin-film epitaxy is becoming increasingly accessible through laser-based heating methods, demonstrations of such utility are still emerging. Here we realize a novel self-regulated growth mode in the Ti-O system by relying on thermally activated diffusion of oxygen from an oxide substrate. We demonstrate oxidation selectivity of single phase films with superior crystallinity to conventional approaches as evidenced by structural and electronic measurements. The diffusion-enabled mode is potentially of wide use in the growth of transition metal oxides, opening up new opportunities for ultra-high purity epitaxial platforms based on d -orbital systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_02741 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | High temperature diffusion enabled epitaxy of the Ti-O system Kim, Jeong Rae Glotzer, Sandra Llanos, Adrian Salmani-Rezaie, Salva Falson, Joseph Materials Science High temperatures promote kinetic processes which can drive crystal synthesis towards ideal thermodynamic conditions, thereby realizing samples of superior quality. While accessing very high temperatures in thin-film epitaxy is becoming increasingly accessible through laser-based heating methods, demonstrations of such utility are still emerging. Here we realize a novel self-regulated growth mode in the Ti-O system by relying on thermally activated diffusion of oxygen from an oxide substrate. We demonstrate oxidation selectivity of single phase films with superior crystallinity to conventional approaches as evidenced by structural and electronic measurements. The diffusion-enabled mode is potentially of wide use in the growth of transition metal oxides, opening up new opportunities for ultra-high purity epitaxial platforms based on d -orbital systems. |
| title | High temperature diffusion enabled epitaxy of the Ti-O system |
| topic | Materials Science |
| url | https://arxiv.org/abs/2411.02741 |