Single photon emitters in thin GaAsN nanowire tubes grown on Si
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arXiv
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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866912681748856832 |
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| author | Denis, Nadine Dede, Didem Nurmamytov, Timur Cianci, Salvatore Santangeli, Francesca Felici, Marco Boureau, Victor Polimeni, Antonio Rubini, Silvia Morral, Anna Fontcuberta i De Luca, Marta |
| author_facet | Denis, Nadine Dede, Didem Nurmamytov, Timur Cianci, Salvatore Santangeli, Francesca Felici, Marco Boureau, Victor Polimeni, Antonio Rubini, Silvia Morral, Anna Fontcuberta i De Luca, Marta |
| contents | III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate lattice-mismatched components beyond the limits of planar epilayers and to create radially and axially confined quantum structures. Here, we report the plasma-assisted molecular beam epitaxy growth of thin GaAs/GaAsN/GaAs core-multishell nanowires monolithically integrated on Si (111) substrates, overcoming the challenges caused by the low solubility of N and a high lattice mismatch. The nanowires have a GaAsN shell of 10 nm containing 2.7% N, which reduces the GaAs bandgap drastically by 400 meV. They have a symmetric core-shell structure with sharp boundaries and a defect-free zincblende phase. The high structural quality reflects in their excellent opto-electroinic properties, including remarkable single photon emission from quantum confined states in the thin GaAsN shell with a second-order autocorrelation function at zero time delay as low as 0.056. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_03185 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Single photon emitters in thin GaAsN nanowire tubes grown on Si Denis, Nadine Dede, Didem Nurmamytov, Timur Cianci, Salvatore Santangeli, Francesca Felici, Marco Boureau, Victor Polimeni, Antonio Rubini, Silvia Morral, Anna Fontcuberta i De Luca, Marta Optics Materials Science Quantum Physics III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate lattice-mismatched components beyond the limits of planar epilayers and to create radially and axially confined quantum structures. Here, we report the plasma-assisted molecular beam epitaxy growth of thin GaAs/GaAsN/GaAs core-multishell nanowires monolithically integrated on Si (111) substrates, overcoming the challenges caused by the low solubility of N and a high lattice mismatch. The nanowires have a GaAsN shell of 10 nm containing 2.7% N, which reduces the GaAs bandgap drastically by 400 meV. They have a symmetric core-shell structure with sharp boundaries and a defect-free zincblende phase. The high structural quality reflects in their excellent opto-electroinic properties, including remarkable single photon emission from quantum confined states in the thin GaAsN shell with a second-order autocorrelation function at zero time delay as low as 0.056. |
| title | Single photon emitters in thin GaAsN nanowire tubes grown on Si |
| topic | Optics Materials Science Quantum Physics |
| url | https://arxiv.org/abs/2411.03185 |