Cover Image

Reconfigurable SWCNT ferroelectric field-effect transistor arrays

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Rhee, Dongjoon, Kim, Kwan-Ho, Zheng, Jeffrey, Song, Seunguk, Peng, Lian-Mao, Olsson III, Roy H., Kang, Joohoon, Jariwala, Deep
Format:	Preprint
Published:	2024
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

2D ferroelectrics and ferroelectrics with 2D: materials and device prospects
by: Leblanc, Chloe, et al.
Published: (2024)

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities
by: Song, Seunguk, et al.
Published: (2024)

Can a ferroelectric diode be a selector-less, universal, non-volatile memory?
by: Sarkar, Soumya, et al.
Published: (2025)

Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
by: Leblanc, Chloe, et al.
Published: (2025)

Observation of giant remnant polarization in ultrathin AlScN at cryogenic temperatures
by: Song, Seunguk, et al.
Published: (2025)

Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation
by: Yousefian, Pedram, et al.
Published: (2025)

Indium selenides for next-generation low-power computing devices
by: Song, Seunguk, et al.
Published: (2025)

Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes
by: Kim, Kwan-Ho, et al.
Published: (2024)

Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN
by: Cho, Hyunmin, et al.
Published: (2025)

Coercive Field Reduction in Ultra-thin Al1-XScXN via Interfacial Engineering with a Scandium Electrode
by: Zhang, Yinuo, et al.
Published: (2025)

Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures
by: Sarkar, Soumya, et al.
Published: (2024)

Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes
by: Liu, Xiwen, et al.
Published: (2022)

Materials for High Temperature Digital Electronics
by: Pradhan, Dhiren K., et al.
Published: (2024)

Reconfigurable, non-volatile control of optical anisotropy in ReS2 via ferroelectric gating
by: Rahaman, Mahfujur, et al.
Published: (2025)

Tandem Photovoltaics from 2D Transition Metal Dichalcogenides on Silicon
by: Hu, Zekun, et al.
Published: (2024)

Single wavelength operating neuromorphic device based on a graphene-ferroelectric transistor
by: Maity, K., et al.
Published: (2024)

Charged-impurity free printing-based diffusion doping in molybdenum disulfide field-effect transistors
by: Jeong, Inho, et al.
Published: (2024)

Wafer-scale CMOS-compatible graphene Josephson field-effect transistors
by: Generalov, Andrey A., et al.
Published: (2024)

Characterization of a graphene-hBN superlattice field effect transistor
by: Choi, Won Beom, et al.
Published: (2024)

Over 50 mA current in interdigitated diamond field effect transistor
by: Michez, Damien, et al.
Published: (2024)

Peak splitting and bias fields in ferroelectric hafnia mediated by interface charge effects
by: Engl, Moritz, et al.
Published: (2025)

A 5.9 GHz Sezawa SAW Acoustic Delay Line Based on Al0.6Sc0.4N-on-Sapphire with Propagation Q-factor > 3,000
by: Chang, Chin-Yu, et al.
Published: (2025)

CMOS-Compatible, AlScN-Based Integrated Electro-Optic Modulator
by: Yoshioka, Valerie, et al.
Published: (2024)

Emergent giant ferroelectric properties in cost-effective raw zirconia dioxide
by: Li, Xianglong, et al.
Published: (2023)

Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors
by: Chiu, Yun-Pin, et al.
Published: (2023)

Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors
by: Liu, Lixin, et al.
Published: (2025)

Bio-realistic and versatile artificial dendrites made of anti-ambipolar transistors
by: Yang, Yifei, et al.
Published: (2022)

Wideband, Efficient AlScN-Si Acousto-Optic Modulator in a Commercially Available Silicon Photonics Process
by: Erdil, Mertcan, et al.
Published: (2024)

Flexible radiofrequency carbon nanotube transistors operating at frequencies above 100 GHz
by: Xia, Fan, et al.
Published: (2025)

Natural Hyperbolicity of Hexagonal Boron Nitride in the Deep Ultraviolet
by: Choi, Bongjun, et al.
Published: (2025)

Tuning Breakdown-to-Coercive Field Ratio in Ultra-Thin Al1-xScxN Films via Reactive Nitrogen Atmosphere
by: Zhang, Yinuo, et al.
Published: (2025)

Anti-aliased metasurfaces beyond the Nyquist limit
by: Kim, Seokwoo, et al.
Published: (2024)

Breaking the material-limited temperature coefficient of resistance via carrier feedback in a single transistor
by: Chen, Jiazhen, et al.
Published: (2025)

Switching response and ionic hysteresis in organic electrochemical transistors
by: Bisquert, Juan, et al.
Published: (2024)

Observation of ferron transport in ferroelectrics
by: Shen, Kaiwen, et al.
Published: (2025)

Acid‐doped polyaniline and its vertically aligned SWCNT composites: Influence of acid type and concentration on structural and electrochemical properties
by: Jiawei Hai, et al.
Published: (2024)

Synchronous polarization switching at sub-coercive fields through stochastic resonance in ferroelectric thin-film capacitors
by: Dey, Vivek, et al.
Published: (2025)

High-Temperature-Resilient Hyperbolicity in a Mixed-Dimensional Superlattice
by: Lynch, Jason, et al.
Published: (2025)

A Wideband Tunable, Nonreciprocal Bandpass Filter Using Magnetostatic Surface Waves with Zero Static Power Consumption
by: Du, Xingyu, et al.
Published: (2025)

Exceptional points in transistor-metamaterial inspired transmission lines
by: Fernandes, David E., et al.
Published: (2024)