Intrinsic inverse band gap versus polarization relation in ferroelectric materials

Fuente: arXiv
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Main Authors: Forero-Correa, Nicolás, Varas-Salinas, Nicolas, Castillo, Tomás M., Reyes-Lillo, Sebastian E.
Format: Preprint
Published: 2024
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author Forero-Correa, Nicolás
Varas-Salinas, Nicolas
Castillo, Tomás M.
Reyes-Lillo, Sebastian E.
author_facet Forero-Correa, Nicolás
Varas-Salinas, Nicolas
Castillo, Tomás M.
Reyes-Lillo, Sebastian E.
contents Ferroelectric materials have promising applications in solar-energy conversion and electro-optic devices. The internal gradient fields produced by the macroscopic polarization may improve electronic and transport semiconducting properties. However, ferroelectrics tend to display relatively large band gaps and hence low solar-energy conversion efficiencies. In this work, we explore materials with an intrinsic inverse relation between band gap and polarization in a single ferroelectric phase. Ferroelectrics with an inverse band gap versus polarization relation are characterized by low density of states contribution at the conduction states and negligible orbital hybridization at the valence states. We use high-throughput and first principles methods to find 15 ferroelectric materials with an inverse band gap versus polarization relation in the Materials Project database. Our work provides a new pathway to design small-band gap large-polarization ferroelectrics, by simultaneously tailoring the band gap and polarization of ferroelectrics with an inverse relation through an external tuning parameter.
format Preprint
id arxiv_https___arxiv_org_abs_2411_03462
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Intrinsic inverse band gap versus polarization relation in ferroelectric materials
Forero-Correa, Nicolás
Varas-Salinas, Nicolas
Castillo, Tomás M.
Reyes-Lillo, Sebastian E.
Materials Science
Ferroelectric materials have promising applications in solar-energy conversion and electro-optic devices. The internal gradient fields produced by the macroscopic polarization may improve electronic and transport semiconducting properties. However, ferroelectrics tend to display relatively large band gaps and hence low solar-energy conversion efficiencies. In this work, we explore materials with an intrinsic inverse relation between band gap and polarization in a single ferroelectric phase. Ferroelectrics with an inverse band gap versus polarization relation are characterized by low density of states contribution at the conduction states and negligible orbital hybridization at the valence states. We use high-throughput and first principles methods to find 15 ferroelectric materials with an inverse band gap versus polarization relation in the Materials Project database. Our work provides a new pathway to design small-band gap large-polarization ferroelectrics, by simultaneously tailoring the band gap and polarization of ferroelectrics with an inverse relation through an external tuning parameter.
title Intrinsic inverse band gap versus polarization relation in ferroelectric materials
topic Materials Science
url https://arxiv.org/abs/2411.03462