Imaging of electrically controlled van der Waals layer stacking in 1T-TaS2
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| Autores principales: | , , , , , , , , , , , , , , , , , , |
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| Formato: | Preprint |
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2024
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| author | Burri, Corinna Hua, Nelson Sanchez, Dario Ferreira Hu, Wenxiang Bell, Henry G. Venturini, Rok Huang, Shih-Wen McConnell, Aidan G. Dizdarevic, Faris Mraz, Anze Svetin, Damjan Lipovsek, Benjamin Topic, Marko Kazazis, Dimitrios Aeppli, Gabriel Grolimund, Daniel Ekinci, Yasin Mihailovic, Dragan Gerber, Simon |
| author_facet | Burri, Corinna Hua, Nelson Sanchez, Dario Ferreira Hu, Wenxiang Bell, Henry G. Venturini, Rok Huang, Shih-Wen McConnell, Aidan G. Dizdarevic, Faris Mraz, Anze Svetin, Damjan Lipovsek, Benjamin Topic, Marko Kazazis, Dimitrios Aeppli, Gabriel Grolimund, Daniel Ekinci, Yasin Mihailovic, Dragan Gerber, Simon |
| contents | Van der Waals (vdW) materials exhibit a variety of states that can be switched with low power at low temperatures, offering a viable cryogenic "flash memory" required for the classical control electronics for solid-state quantum information processing. In 1T-TaS2, a non-volatile metallic 'hidden' state can be induced from an insulating equilibrium charge-density wave ground state using either optical or electrical pulses. Given that conventional memristors form localized, filamentary channels which support the current, a key question for design concerns the geometry of the conduction region in highly energy-efficient 1T-TaS2 devices. Here, we report in operando micro-beam X-ray diffraction, fluorescence, and concurrent transport measurements, allowing us to spatially image the non-thermal hidden state induced by electrical switching of 1T-TaS2. Our results reveal a long-range ordered, non-filamentary switched state that extends well below the electrodes, implying that the self-organized, collective growth of the hidden phase is driven by a combination of charge flow and lattice strain. Our unique combination of techniques showcases the potential of non-destructive, three-dimensional X-ray imaging to study bulk switching properties in microscopic detail, namely electrical control of the vdW layer stacking. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_04830 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Imaging of electrically controlled van der Waals layer stacking in 1T-TaS2 Burri, Corinna Hua, Nelson Sanchez, Dario Ferreira Hu, Wenxiang Bell, Henry G. Venturini, Rok Huang, Shih-Wen McConnell, Aidan G. Dizdarevic, Faris Mraz, Anze Svetin, Damjan Lipovsek, Benjamin Topic, Marko Kazazis, Dimitrios Aeppli, Gabriel Grolimund, Daniel Ekinci, Yasin Mihailovic, Dragan Gerber, Simon Strongly Correlated Electrons Van der Waals (vdW) materials exhibit a variety of states that can be switched with low power at low temperatures, offering a viable cryogenic "flash memory" required for the classical control electronics for solid-state quantum information processing. In 1T-TaS2, a non-volatile metallic 'hidden' state can be induced from an insulating equilibrium charge-density wave ground state using either optical or electrical pulses. Given that conventional memristors form localized, filamentary channels which support the current, a key question for design concerns the geometry of the conduction region in highly energy-efficient 1T-TaS2 devices. Here, we report in operando micro-beam X-ray diffraction, fluorescence, and concurrent transport measurements, allowing us to spatially image the non-thermal hidden state induced by electrical switching of 1T-TaS2. Our results reveal a long-range ordered, non-filamentary switched state that extends well below the electrodes, implying that the self-organized, collective growth of the hidden phase is driven by a combination of charge flow and lattice strain. Our unique combination of techniques showcases the potential of non-destructive, three-dimensional X-ray imaging to study bulk switching properties in microscopic detail, namely electrical control of the vdW layer stacking. |
| title | Imaging of electrically controlled van der Waals layer stacking in 1T-TaS2 |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2411.04830 |