Unconventional temperature evolution of quantum oscillations in Sn-doped Bi$_{1.1}$Sb$_{0.9}$Te$_{2}$S topological insulator
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arXiv
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| Autores principales: | , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Materias: | |
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| _version_ | 1866912110834876416 |
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| author | Gudac, Bruno Sačer, Petar Orbanić, Filip Kokanović, Ivan Rukelj, Zoran Popčević, Petar Akšamović, Luka Barišić, Neven Ž. Nurmamat, Munisa Kimura, Akio Novak, Mario |
| author_facet | Gudac, Bruno Sačer, Petar Orbanić, Filip Kokanović, Ivan Rukelj, Zoran Popčević, Petar Akšamović, Luka Barišić, Neven Ž. Nurmamat, Munisa Kimura, Akio Novak, Mario |
| contents | Among various topological insulators, Sn-doped Bi$_{1.1}$Sb$_{0.9}$Te$_{2}$S stands out for its exceptional properties. It has a wide energy gap and typically exhibits a well-isolated Dirac point and a Fermi level positioned within the gap. The samples we present display metallic-like low-temperature resistivity attributed to surface states, pronounced quantum oscillations observable even at 40 K, and a Fermi level located approximately 100 meV above the Dirac point. In this work, we report an unusual effect: a strong temperature dependence of the quantum oscillation frequency, which decreases by around 10\% between 2 and 40 K. This reduction significantly exceeds the expected effects of the Sommerfeld and topological corrections for Dirac quasi-particles, which could account for only one-eighth of the observed change. We attribute this change to the temperature-induced renormalization of the bulk band gap size due to electron-phonon interactions, which in turn affect the position of the surface Dirac point within the gap. Furthermore, we propose that in this compound, surface quantum oscillations can serve as a precise tool for investigating the low-temperature evolution of the bulk band gap size. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_05207 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Unconventional temperature evolution of quantum oscillations in Sn-doped Bi$_{1.1}$Sb$_{0.9}$Te$_{2}$S topological insulator Gudac, Bruno Sačer, Petar Orbanić, Filip Kokanović, Ivan Rukelj, Zoran Popčević, Petar Akšamović, Luka Barišić, Neven Ž. Nurmamat, Munisa Kimura, Akio Novak, Mario Materials Science Among various topological insulators, Sn-doped Bi$_{1.1}$Sb$_{0.9}$Te$_{2}$S stands out for its exceptional properties. It has a wide energy gap and typically exhibits a well-isolated Dirac point and a Fermi level positioned within the gap. The samples we present display metallic-like low-temperature resistivity attributed to surface states, pronounced quantum oscillations observable even at 40 K, and a Fermi level located approximately 100 meV above the Dirac point. In this work, we report an unusual effect: a strong temperature dependence of the quantum oscillation frequency, which decreases by around 10\% between 2 and 40 K. This reduction significantly exceeds the expected effects of the Sommerfeld and topological corrections for Dirac quasi-particles, which could account for only one-eighth of the observed change. We attribute this change to the temperature-induced renormalization of the bulk band gap size due to electron-phonon interactions, which in turn affect the position of the surface Dirac point within the gap. Furthermore, we propose that in this compound, surface quantum oscillations can serve as a precise tool for investigating the low-temperature evolution of the bulk band gap size. |
| title | Unconventional temperature evolution of quantum oscillations in Sn-doped Bi$_{1.1}$Sb$_{0.9}$Te$_{2}$S topological insulator |
| topic | Materials Science |
| url | https://arxiv.org/abs/2411.05207 |