Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots
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arXiv
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| Autori principali: | , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866913575331692544 |
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| author | Jin, Ik Kyeong Hillier, Joseph Liles, Scott D. Wang, Zhanning Shamim, Aaquib Vorreiter, Isaac Li, Ruoyu Godfrin, Clement Kubicek, Stefan De Greve, Kristiaan Culcer, Dimitrie Hamilton, Alexander R. |
| author_facet | Jin, Ik Kyeong Hillier, Joseph Liles, Scott D. Wang, Zhanning Shamim, Aaquib Vorreiter, Isaac Li, Ruoyu Godfrin, Clement Kubicek, Stefan De Greve, Kristiaan Culcer, Dimitrie Hamilton, Alexander R. |
| contents | In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. Using DC transport measurements, we investigate the g-tensor and spin-relaxation induced leakage current within the Pauli spin-blockade regime as a function of magnetic-field orientation at three different hole occupation numbers. We find the g-tensor and spin-leakage current to be highly anisotropic due to light-hole/heavy-hole mixing and spin-orbit mixing, but discover the anisotropies to be relatively insensitive to the dot hole number. Furthermore, we extract the dominant inter-dot spin-orbit coupling mechanism as surface Dresselhaus, with an in-plane orientation parallel to transport and magnitude $\boldsymbol{t_{SO}}$ $\approx$ 300 neV. Finally, we observe a strong correlation between the g-factor difference ($δ$$\boldsymbol{g}$) between each dot and the spin-leakage current anisotropy, as a result of $δ$$\boldsymbol{g}$ providing an additional spin-relaxation pathway, and should be considered. ]Our findings indicate that hole-spin devices are not as sensitive to precise operating conditions as anticipated. This has important implications optimizing spin control and readout based on magnetic-field direction, together with tuning large arrays of QDs as spin-qubits. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_06016 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots Jin, Ik Kyeong Hillier, Joseph Liles, Scott D. Wang, Zhanning Shamim, Aaquib Vorreiter, Isaac Li, Ruoyu Godfrin, Clement Kubicek, Stefan De Greve, Kristiaan Culcer, Dimitrie Hamilton, Alexander R. Mesoscale and Nanoscale Physics In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. Using DC transport measurements, we investigate the g-tensor and spin-relaxation induced leakage current within the Pauli spin-blockade regime as a function of magnetic-field orientation at three different hole occupation numbers. We find the g-tensor and spin-leakage current to be highly anisotropic due to light-hole/heavy-hole mixing and spin-orbit mixing, but discover the anisotropies to be relatively insensitive to the dot hole number. Furthermore, we extract the dominant inter-dot spin-orbit coupling mechanism as surface Dresselhaus, with an in-plane orientation parallel to transport and magnitude $\boldsymbol{t_{SO}}$ $\approx$ 300 neV. Finally, we observe a strong correlation between the g-factor difference ($δ$$\boldsymbol{g}$) between each dot and the spin-leakage current anisotropy, as a result of $δ$$\boldsymbol{g}$ providing an additional spin-relaxation pathway, and should be considered. ]Our findings indicate that hole-spin devices are not as sensitive to precise operating conditions as anticipated. This has important implications optimizing spin control and readout based on magnetic-field direction, together with tuning large arrays of QDs as spin-qubits. |
| title | Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2411.06016 |