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| Natura: | Preprint |
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2024
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| Accesso online: | https://arxiv.org/abs/2411.06147 |
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| _version_ | 1866915012552949760 |
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| author | Kang, Qiang Hu, Chenguang |
| author_facet | Kang, Qiang Hu, Chenguang |
| contents | The transfer matrix method (TMM) is widely used to analyze the transport properties of one-dimensional or quasi-one-dimensional systems, such as nanostructures and layered materials in spintronics. However, its application in quantifying the influence of different crystallographic orientations on tunneling magnetoresistance (TMR) remains underexplored [1, 2]. This study employs the transfer matrix method to construct orientation-specific matrices, enabling a systematic investigation of conductance variations under different magnetic and crystallographic conditions. This approach offers a deeper understanding of how crystallographic orientation modulates TMR by developing a framework that adapts the TMM to account for orientation-dependent electronic states and interfacial characteristics [3]. Fundamentally, the TMM represents the partition function for systems with interactions limited to nearest neighbors. It is particularly well-suited for modeling spin-dependent electron tunneling in oriented magnetic tunnel junctions [4, 5]. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_06147 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Quantifying Crystallographic Orientation Effects on Tunneling Magnetoresistance via Transfer Matrix and Simulation Kang, Qiang Hu, Chenguang Mesoscale and Nanoscale Physics Mathematical Physics The transfer matrix method (TMM) is widely used to analyze the transport properties of one-dimensional or quasi-one-dimensional systems, such as nanostructures and layered materials in spintronics. However, its application in quantifying the influence of different crystallographic orientations on tunneling magnetoresistance (TMR) remains underexplored [1, 2]. This study employs the transfer matrix method to construct orientation-specific matrices, enabling a systematic investigation of conductance variations under different magnetic and crystallographic conditions. This approach offers a deeper understanding of how crystallographic orientation modulates TMR by developing a framework that adapts the TMM to account for orientation-dependent electronic states and interfacial characteristics [3]. Fundamentally, the TMM represents the partition function for systems with interactions limited to nearest neighbors. It is particularly well-suited for modeling spin-dependent electron tunneling in oriented magnetic tunnel junctions [4, 5]. |
| title | Quantifying Crystallographic Orientation Effects on Tunneling Magnetoresistance via Transfer Matrix and Simulation |
| topic | Mesoscale and Nanoscale Physics Mathematical Physics |
| url | https://arxiv.org/abs/2411.06147 |