Effect of the Lattice-distortion on the Electronic Structure, Magnetic Anisotropy, and Hall Conductivities of the CoFeCrGa Spin Gapless Semiconductor: A First-Principles Study

Fuente: arXiv
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Main Authors: Kumar, Amar, Chaudhary, Sujeet, Chandra, Sharat
Format: Preprint
Published: 2024
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_version_ 1866908586036166656
author Kumar, Amar
Chaudhary, Sujeet
Chandra, Sharat
author_facet Kumar, Amar
Chaudhary, Sujeet
Chandra, Sharat
contents Spin gapless semiconductors (SGSs), novel quantum materials, are notable for their tunable spin-transport properties. Considering that the SGS materials might have an invariably deformed lattice upon integration into devices, and given that the SGS nature is highly sensitive to external factors, the impact of lattice distortions on the different physical properties of CoFeCrGa SGS alloy has been investigated using density functional theory calculations. For lattice distortions, the uniform strain corresponding to $-6\% \leq ΔV / V_0 \leq 6\% \quad (a: 5.60\text{-}5.83~\textÅ)$, and the tetragonal distortion corresponding to $0.8 \leq c/a \leq 1.2 \quad (a: 5.38\text{-}6.16~\textÅ,~c: 4.92\text{-}6.45~\textÅ)$ are modelled. All uniformly strained CoFeCrGa structures are found to display SGS character, magnetic isotropy, small anomalous Hall conductivity (AHC), and small spin Hall conductivity (SHC) - closely resembling those of the ideal CoFeCrGa structure. In contrast, the tetragonally deformed structures display nearly half-metallic behavior with very high spin polarization, very large magnetic anisotropy ($ \sim 10^6~\mathrm{J/m^3}$), and very large AHC ranging from ($ -215 \text{ to } 250~\mathrm{S/cm} $) depending on the axial ratio of the distorted structure. The SHC, however, does not change significantly under tetragonal distortion and remains nearly of the same order as that of the Y-I ordered structure. In summary, these findings demonstrate that CoFeCrGa displays favorable spintronic properties even under lattice distortions, underscoring its potential for next-generation spintronic applications.
format Preprint
id arxiv_https___arxiv_org_abs_2411_06520
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Effect of the Lattice-distortion on the Electronic Structure, Magnetic Anisotropy, and Hall Conductivities of the CoFeCrGa Spin Gapless Semiconductor: A First-Principles Study
Kumar, Amar
Chaudhary, Sujeet
Chandra, Sharat
Materials Science
Spin gapless semiconductors (SGSs), novel quantum materials, are notable for their tunable spin-transport properties. Considering that the SGS materials might have an invariably deformed lattice upon integration into devices, and given that the SGS nature is highly sensitive to external factors, the impact of lattice distortions on the different physical properties of CoFeCrGa SGS alloy has been investigated using density functional theory calculations. For lattice distortions, the uniform strain corresponding to $-6\% \leq ΔV / V_0 \leq 6\% \quad (a: 5.60\text{-}5.83~\textÅ)$, and the tetragonal distortion corresponding to $0.8 \leq c/a \leq 1.2 \quad (a: 5.38\text{-}6.16~\textÅ,~c: 4.92\text{-}6.45~\textÅ)$ are modelled. All uniformly strained CoFeCrGa structures are found to display SGS character, magnetic isotropy, small anomalous Hall conductivity (AHC), and small spin Hall conductivity (SHC) - closely resembling those of the ideal CoFeCrGa structure. In contrast, the tetragonally deformed structures display nearly half-metallic behavior with very high spin polarization, very large magnetic anisotropy ($ \sim 10^6~\mathrm{J/m^3}$), and very large AHC ranging from ($ -215 \text{ to } 250~\mathrm{S/cm} $) depending on the axial ratio of the distorted structure. The SHC, however, does not change significantly under tetragonal distortion and remains nearly of the same order as that of the Y-I ordered structure. In summary, these findings demonstrate that CoFeCrGa displays favorable spintronic properties even under lattice distortions, underscoring its potential for next-generation spintronic applications.
title Effect of the Lattice-distortion on the Electronic Structure, Magnetic Anisotropy, and Hall Conductivities of the CoFeCrGa Spin Gapless Semiconductor: A First-Principles Study
topic Materials Science
url https://arxiv.org/abs/2411.06520