Gate-Controllable Quadri-Layertronics in 2D Multiferroic Antiferromagnet
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866910694004228096 |
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| author | Zhang, Ting Wang, Mingsheng Xu, Xilong Dai, Ying Ma, Yandong |
| author_facet | Zhang, Ting Wang, Mingsheng Xu, Xilong Dai, Ying Ma, Yandong |
| contents | Layertronics that manifests layer Hall effect is typically considered to intrinsically possess binary physics. Using symmetry arguments and a low-energy kp model, we show that the layer physics in layertronics can be engineered into quaternary mode, giving rise to the concept of quadri-layertronics. The mechanism correlates to the interplay between out-of-plane ferroelectricity and valley physics in antiferromagnetic multiferroic quadrilayer, which enables the layer-locked Berry curvature and Hall effect, i.e., deflecting the carriers with four different layer physics to move in specific directions. More importantly, the quadri-layertronics can be generated and manipulated by controlling the interlayer dipole arrangements via a gate voltage, allowing for the selective induction and detection of layer Hall effect in specific layers. Using first principles calculations, we further demonstrate the gate control of quadri-layertronics in multiferroic antiferromagnet of quadrilayer OsCl2. These explored phenomena and insights greatly enrich the research on layertronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_07016 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Gate-Controllable Quadri-Layertronics in 2D Multiferroic Antiferromagnet Zhang, Ting Wang, Mingsheng Xu, Xilong Dai, Ying Ma, Yandong Materials Science Computational Physics Layertronics that manifests layer Hall effect is typically considered to intrinsically possess binary physics. Using symmetry arguments and a low-energy kp model, we show that the layer physics in layertronics can be engineered into quaternary mode, giving rise to the concept of quadri-layertronics. The mechanism correlates to the interplay between out-of-plane ferroelectricity and valley physics in antiferromagnetic multiferroic quadrilayer, which enables the layer-locked Berry curvature and Hall effect, i.e., deflecting the carriers with four different layer physics to move in specific directions. More importantly, the quadri-layertronics can be generated and manipulated by controlling the interlayer dipole arrangements via a gate voltage, allowing for the selective induction and detection of layer Hall effect in specific layers. Using first principles calculations, we further demonstrate the gate control of quadri-layertronics in multiferroic antiferromagnet of quadrilayer OsCl2. These explored phenomena and insights greatly enrich the research on layertronics. |
| title | Gate-Controllable Quadri-Layertronics in 2D Multiferroic Antiferromagnet |
| topic | Materials Science Computational Physics |
| url | https://arxiv.org/abs/2411.07016 |