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Hauptverfasser: Mamian, Karen A., Popov, Vladimir V., Frolov, Aleksandr Yu., Fedyanin, Andrey A.
Format: Preprint
Veröffentlicht: 2024
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Online-Zugang:https://arxiv.org/abs/2411.08385
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author Mamian, Karen A.
Popov, Vladimir V.
Frolov, Aleksandr Yu.
Fedyanin, Andrey A.
author_facet Mamian, Karen A.
Popov, Vladimir V.
Frolov, Aleksandr Yu.
Fedyanin, Andrey A.
contents Enhancement and tailoring of the transverse magneto-optical Kerr effect (TMOKE) in hybrid metasurfaces comprising rectangular silicon nanowires coupled with a nickel substrate are demonstrated. The excitation of Mie modes of different orders in nanowires causes the enhancement. The in-plane magnetic dipole mode leads to the largest TMOKE enhancement compared to other Mie modes. Changing the width of silicon nanowires leads to a modification of that mode, thereby ensuring the tailoring of the TMOKE within the range of $2.2\% - 3.8\%$. This tunability is associated with the modification of the near-field localized at the Si/Ni interface and the far-field response of the excited magnetic dipole mode. Adjusting these two quantities allows one to achieve the highest values of the TMOKE caused by individual Mie modes in silicon nanowires.
format Preprint
id arxiv_https___arxiv_org_abs_2411_08385
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Tailoring Transverse Magneto-Optical Kerr Effect Enhancement in Mie-resonant Nanowire-based Metasurfaces
Mamian, Karen A.
Popov, Vladimir V.
Frolov, Aleksandr Yu.
Fedyanin, Andrey A.
Optics
Enhancement and tailoring of the transverse magneto-optical Kerr effect (TMOKE) in hybrid metasurfaces comprising rectangular silicon nanowires coupled with a nickel substrate are demonstrated. The excitation of Mie modes of different orders in nanowires causes the enhancement. The in-plane magnetic dipole mode leads to the largest TMOKE enhancement compared to other Mie modes. Changing the width of silicon nanowires leads to a modification of that mode, thereby ensuring the tailoring of the TMOKE within the range of $2.2\% - 3.8\%$. This tunability is associated with the modification of the near-field localized at the Si/Ni interface and the far-field response of the excited magnetic dipole mode. Adjusting these two quantities allows one to achieve the highest values of the TMOKE caused by individual Mie modes in silicon nanowires.
title Tailoring Transverse Magneto-Optical Kerr Effect Enhancement in Mie-resonant Nanowire-based Metasurfaces
topic Optics
url https://arxiv.org/abs/2411.08385