Effect of Top Al$_2$O$_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) Gate Structure

Fuente: arXiv

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Bibliographic Details
Main Authors:	Hu, Tao, Jia, Xinpei, Han, Runhao, Yang, Jia, Bai, Mingkai, Dai, Saifei, Chen, Zeqi, Ding, Yajing, Yang, Shuai, Han, Kai, Wang, Yanrong, Zhang, Jing, Zhao, Yuanyuan, Ke, Xiaoyu, Sun, Xiaoqing, Chai, Junshuai, Xu, Hao, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun
Format:	Preprint
Published:	2024
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2411.08558