Effect of Top Al$_2$O$_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) Gate Structure
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| Main Authors: | , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866909388206243840 |
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| author | Hu, Tao Jia, Xinpei Han, Runhao Yang, Jia Bai, Mingkai Dai, Saifei Chen, Zeqi Ding, Yajing Yang, Shuai Han, Kai Wang, Yanrong Zhang, Jing Zhao, Yuanyuan Ke, Xiaoyu Sun, Xiaoqing Chai, Junshuai Xu, Hao Wang, Xiaolei Wang, Wenwu Ye, Tianchun |
| author_facet | Hu, Tao Jia, Xinpei Han, Runhao Yang, Jia Bai, Mingkai Dai, Saifei Chen, Zeqi Ding, Yajing Yang, Shuai Han, Kai Wang, Yanrong Zhang, Jing Zhao, Yuanyuan Ke, Xiaoyu Sun, Xiaoqing Chai, Junshuai Xu, Hao Wang, Xiaolei Wang, Wenwu Ye, Tianchun |
| contents | We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) gate structure. We find that the MW first increases and then remains almost constant with the increasing thickness of the top Al2O3. The phenomenon is attributed to the lower electric field of the ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ in the MIFIS structure with a thicker top Al2O3 after a program operation. The lower electric field makes the charges trapped at the top Al2O3/Hf0.5Zr0.5O$_2$ interface, which are injected from the metal gate, cannot be retained. Furthermore, we study the effect of the top Al$_2$O$_3$ interlayer thickness on the reliability (endurance characteristics and retention characteristics). We find that the MIFIS structure with a thicker top Al$_2$O$_3$ interlayer has poorer retention and endurance characteristics. Our work is helpful in deeply understanding the effect of top interlayer thickness on the MW and reliability of Si-FeFETs with MIFIS gate stacks. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_08558 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Effect of Top Al$_2$O$_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) Gate Structure Hu, Tao Jia, Xinpei Han, Runhao Yang, Jia Bai, Mingkai Dai, Saifei Chen, Zeqi Ding, Yajing Yang, Shuai Han, Kai Wang, Yanrong Zhang, Jing Zhao, Yuanyuan Ke, Xiaoyu Sun, Xiaoqing Chai, Junshuai Xu, Hao Wang, Xiaolei Wang, Wenwu Ye, Tianchun Materials Science Applied Physics We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) gate structure. We find that the MW first increases and then remains almost constant with the increasing thickness of the top Al2O3. The phenomenon is attributed to the lower electric field of the ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ in the MIFIS structure with a thicker top Al2O3 after a program operation. The lower electric field makes the charges trapped at the top Al2O3/Hf0.5Zr0.5O$_2$ interface, which are injected from the metal gate, cannot be retained. Furthermore, we study the effect of the top Al$_2$O$_3$ interlayer thickness on the reliability (endurance characteristics and retention characteristics). We find that the MIFIS structure with a thicker top Al$_2$O$_3$ interlayer has poorer retention and endurance characteristics. Our work is helpful in deeply understanding the effect of top interlayer thickness on the MW and reliability of Si-FeFETs with MIFIS gate stacks. |
| title | Effect of Top Al$_2$O$_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) Gate Structure |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2411.08558 |