Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866917837266747392 |
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| author | Cota-Martínez, I. M. Antón, R. López Garay-Tapia, A. M. Matutes-Aquino, J. A. Santillán-Rodríguez, C. R. Saénz-Hernández, R. J. Gutiérrez-Pérez, R. M. Holguín-Momaca, J. T. Ross, C. A. Olive-Méndez, Sion F. |
| author_facet | Cota-Martínez, I. M. Antón, R. López Garay-Tapia, A. M. Matutes-Aquino, J. A. Santillán-Rodríguez, C. R. Saénz-Hernández, R. J. Gutiérrez-Pérez, R. M. Holguín-Momaca, J. T. Ross, C. A. Olive-Méndez, Sion F. |
| contents | Hexagonal antiferromagnetic D019-Mn3X (X = Sn, Ge, Ga) compounds, with a non-collinear Kagome spin structure, are Weyl semimetals exhibiting novel topological transport properties. The longitudinal magnetoresistance of c-oriented epitaxial Ru/Mn3Ga thin films exhibits a positive quadratic dependence on magnetic field over a wide range of temperatures. Here we describe the transverse magnetoresistance, with the field in the out-of-plane direction, for c-oriented epitaxial GaN (0001)/Mn3Ga films. There is a transition from a negative linear to a positive quadratic dependence on magnetic field in the temperature range from 200 K to 300 K. The electrical resistivity shows a metallic to semiconductor transition at 230 K. By applying the electric field along two perpendicular in-plane directions we find asymmetry in the magnetoresistance curves due to self-spin polarized currents created through magnetic octupole clusters. First principles calculations confirmed the metallic to semiconductor transition corresponds to reordering the spin structure to a higher symmetry configuration. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_09031 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly Cota-Martínez, I. M. Antón, R. López Garay-Tapia, A. M. Matutes-Aquino, J. A. Santillán-Rodríguez, C. R. Saénz-Hernández, R. J. Gutiérrez-Pérez, R. M. Holguín-Momaca, J. T. Ross, C. A. Olive-Méndez, Sion F. Materials Science Hexagonal antiferromagnetic D019-Mn3X (X = Sn, Ge, Ga) compounds, with a non-collinear Kagome spin structure, are Weyl semimetals exhibiting novel topological transport properties. The longitudinal magnetoresistance of c-oriented epitaxial Ru/Mn3Ga thin films exhibits a positive quadratic dependence on magnetic field over a wide range of temperatures. Here we describe the transverse magnetoresistance, with the field in the out-of-plane direction, for c-oriented epitaxial GaN (0001)/Mn3Ga films. There is a transition from a negative linear to a positive quadratic dependence on magnetic field in the temperature range from 200 K to 300 K. The electrical resistivity shows a metallic to semiconductor transition at 230 K. By applying the electric field along two perpendicular in-plane directions we find asymmetry in the magnetoresistance curves due to self-spin polarized currents created through magnetic octupole clusters. First principles calculations confirmed the metallic to semiconductor transition corresponds to reordering the spin structure to a higher symmetry configuration. |
| title | Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly |
| topic | Materials Science |
| url | https://arxiv.org/abs/2411.09031 |