Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin-Orbit Torque Layer
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arXiv
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| Auteurs principaux: | , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866913577953132544 |
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| author | Sahoo, Krishna Rani Talluri, Manoj Maity, Dipak Mundlia, Suman Lal, Ashique Devapriya, M. S. Haldar, Arabinda Murapaka, Chandrasekhar Narayanan, Tharangattu N. |
| author_facet | Sahoo, Krishna Rani Talluri, Manoj Maity, Dipak Mundlia, Suman Lal, Ashique Devapriya, M. S. Haldar, Arabinda Murapaka, Chandrasekhar Narayanan, Tharangattu N. |
| contents | Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we demonstrate vanadium (V) substitutionally doped monolayer MoS2 (VMS) as a potential spin Hall material having tunable electrical conductivity, SOC strength, and room temperature magnetism. Systematic enhancement in the electrical conductivity is observed with the extent of V doping, where it is enhanced from ~0.3 S/m of MoS2 to ~100000 S/m upon doping to the level of 9 atomic%. Ferromagnetic resonance (FMR) based spin-pumping experiments indicate the spin transport across the junction of permalloy (Py) and VMS. Spin-torque FMR measurements demonstrate the suggesting latter's potential as a spin-orbit torque layer in 2D spintronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_09277 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin-Orbit Torque Layer Sahoo, Krishna Rani Talluri, Manoj Maity, Dipak Mundlia, Suman Lal, Ashique Devapriya, M. S. Haldar, Arabinda Murapaka, Chandrasekhar Narayanan, Tharangattu N. Applied Physics Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we demonstrate vanadium (V) substitutionally doped monolayer MoS2 (VMS) as a potential spin Hall material having tunable electrical conductivity, SOC strength, and room temperature magnetism. Systematic enhancement in the electrical conductivity is observed with the extent of V doping, where it is enhanced from ~0.3 S/m of MoS2 to ~100000 S/m upon doping to the level of 9 atomic%. Ferromagnetic resonance (FMR) based spin-pumping experiments indicate the spin transport across the junction of permalloy (Py) and VMS. Spin-torque FMR measurements demonstrate the suggesting latter's potential as a spin-orbit torque layer in 2D spintronic devices. |
| title | Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin-Orbit Torque Layer |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2411.09277 |