Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon

Fuente: arXiv

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Bibliographic Details
Main Authors:	Lendyashova, Vera V., Ilkiv, Igor V., Talalaev, Vadim G., Shugabaev, Talgat, Reznik, Rodion R., Cirlin, George E.
Format:	Preprint
Published:	2024
Subjects:	Optics 97M50 J.2.9
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2411.09295