Measuring Hall voltage and Hall resistance in an atom-based quantum simulator

Fuente: arXiv
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Hauptverfasser: Zhou, T. -W., Beller, T., Masini, G., Parravicini, J., Cappellini, G., Repellin, C., Giamarchi, T., Catani, J., Filippone, M., Fallani, L.
Format: Preprint
Veröffentlicht: 2024
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author Zhou, T. -W.
Beller, T.
Masini, G.
Parravicini, J.
Cappellini, G.
Repellin, C.
Giamarchi, T.
Catani, J.
Filippone, M.
Fallani, L.
author_facet Zhou, T. -W.
Beller, T.
Masini, G.
Parravicini, J.
Cappellini, G.
Repellin, C.
Giamarchi, T.
Catani, J.
Filippone, M.
Fallani, L.
contents In the Hall effect, a voltage drop develops perpendicularly to the current flow in the presence of a magnetic field, leading to a transverse Hall resistance. Recent developments with quantum simulators have unveiled strongly correlated and universal manifestations of the Hall effect. However, a direct measurement of the Hall voltage and of the Hall resistance in a non-electronic system of strongly interacting fermions was not achieved to date. Here, we demonstrate a technique for measuring the Hall voltage in a neutral-atom-based quantum simulator. From that we provide the first direct measurement of the Hall resistance in a cold-atom analogue of a solid-state Hall bar and study its dependence on the carrier density, along with theoretical analyses. Our work closes a major gap between analogue quantum simulations and measurements performed in solid-state systems, providing a key tool for the exploration of the Hall effect in highly tunable and strongly correlated systems.
format Preprint
id arxiv_https___arxiv_org_abs_2411_09744
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Measuring Hall voltage and Hall resistance in an atom-based quantum simulator
Zhou, T. -W.
Beller, T.
Masini, G.
Parravicini, J.
Cappellini, G.
Repellin, C.
Giamarchi, T.
Catani, J.
Filippone, M.
Fallani, L.
Quantum Gases
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
Quantum Physics
In the Hall effect, a voltage drop develops perpendicularly to the current flow in the presence of a magnetic field, leading to a transverse Hall resistance. Recent developments with quantum simulators have unveiled strongly correlated and universal manifestations of the Hall effect. However, a direct measurement of the Hall voltage and of the Hall resistance in a non-electronic system of strongly interacting fermions was not achieved to date. Here, we demonstrate a technique for measuring the Hall voltage in a neutral-atom-based quantum simulator. From that we provide the first direct measurement of the Hall resistance in a cold-atom analogue of a solid-state Hall bar and study its dependence on the carrier density, along with theoretical analyses. Our work closes a major gap between analogue quantum simulations and measurements performed in solid-state systems, providing a key tool for the exploration of the Hall effect in highly tunable and strongly correlated systems.
title Measuring Hall voltage and Hall resistance in an atom-based quantum simulator
topic Quantum Gases
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
Quantum Physics
url https://arxiv.org/abs/2411.09744