Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects

Fuente: arXiv
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Main Authors: Gao, Xilong, Si, Jia, Zhang, Zhiyong
Format: Preprint
Published: 2024
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author Gao, Xilong
Si, Jia
Zhang, Zhiyong
author_facet Gao, Xilong
Si, Jia
Zhang, Zhiyong
contents Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate the performance of CNT FETs, this method now poses challenges for enhancing individual FET performance and is not suitable for scalable fabrication. In this paper, we summarize the limitations of the lift-off process and point out that future advancements in manufacturing techniques should prioritize the development of etching processes.
format Preprint
id arxiv_https___arxiv_org_abs_2411_10001
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects
Gao, Xilong
Si, Jia
Zhang, Zhiyong
Applied Physics
Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate the performance of CNT FETs, this method now poses challenges for enhancing individual FET performance and is not suitable for scalable fabrication. In this paper, we summarize the limitations of the lift-off process and point out that future advancements in manufacturing techniques should prioritize the development of etching processes.
title Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects
topic Applied Physics
url https://arxiv.org/abs/2411.10001