Dissociative photoionization of EUV lithography photoresist models
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2024
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866909391416983552 |
|---|---|
| author | Gentile, Marziogiuseppe Gerlach, Marius Richter, Robert van Setten, Michiel J. Petersen, John S. van der Heide, Paul Holzmeier, Fabian |
| author_facet | Gentile, Marziogiuseppe Gerlach, Marius Richter, Robert van Setten, Michiel J. Petersen, John S. van der Heide, Paul Holzmeier, Fabian |
| contents | The dissociative photoionization of \textit{tert}-butyl methyl methacrylate, a monomer unit found in many ESCAP resists, was investigated in a gas phase photoelectron photoion coincidence experiment employing extreme ultraviolet (EUV) synchrotron radiation at 13.5 nm. It was found that the interaction of EUV photons with the molecules leads almost exclusively to dissociation. However, the ionization can also directly deprotect the ester function, thus inducing the solubility switch wanted in a resist film. These results serve as a building block to reconstruct the full picture of the mechanism in widely used chemically amplified resist thin films, provide a knob to tailor more performant resist materials, and will aid interpreting advanced ultrafast time-resolved experiments. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2411_10177 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Dissociative photoionization of EUV lithography photoresist models Gentile, Marziogiuseppe Gerlach, Marius Richter, Robert van Setten, Michiel J. Petersen, John S. van der Heide, Paul Holzmeier, Fabian Materials Science Chemical Physics The dissociative photoionization of \textit{tert}-butyl methyl methacrylate, a monomer unit found in many ESCAP resists, was investigated in a gas phase photoelectron photoion coincidence experiment employing extreme ultraviolet (EUV) synchrotron radiation at 13.5 nm. It was found that the interaction of EUV photons with the molecules leads almost exclusively to dissociation. However, the ionization can also directly deprotect the ester function, thus inducing the solubility switch wanted in a resist film. These results serve as a building block to reconstruct the full picture of the mechanism in widely used chemically amplified resist thin films, provide a knob to tailor more performant resist materials, and will aid interpreting advanced ultrafast time-resolved experiments. |
| title | Dissociative photoionization of EUV lithography photoresist models |
| topic | Materials Science Chemical Physics |
| url | https://arxiv.org/abs/2411.10177 |