Heterostructure and Interfacial Engineering for Low-Resistance Contacts to Ultra-Wide Bandgap AlGaN

Documenti analoghi

• Barrier Electrostatics and Contact Engineering for Ultra-Wide Bandgap AlGaN HFETs
  di: Shin, Seungheon, et al.
  Pubblicazione: (2025)
• Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures
  di: Shin, Seungheon, et al.
  Pubblicazione: (2025)
• Scaled Ultra-Wide Bandgap AlGaN Polarization-Graded FET with Ultra-thin Buffer Layer
  di: Zhu, Yinxuan, et al.
  Pubblicazione: (2025)
• Ultra-Wide Bandgap AlGaN Heterostructure Field Effect Transistors with Current Gain Cutoff Frequency Above 85 GHz
  di: Zhu, Yinxuan, et al.
  Pubblicazione: (2025)
• High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
  di: Shin, Seungheon, et al.
  Pubblicazione: (2025)